Allicdata Part #: | ARF468AG-ND |
Manufacturer Part#: |
ARF468AG |
Price: | $ 29.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF MOSFET (VDMOS) |
More Detail: | RF Mosfet N-Channel 150V 40.68MHz 15dB 300W TO-26... |
DataSheet: | ARF468AG Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 26.95850 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 40.68MHz |
Gain: | 15dB |
Voltage - Test: | 150V |
Current Rating: | 22A |
Noise Figure: | -- |
Power - Output: | 300W |
Voltage - Rated: | 500V |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 |
Description
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The ARF468AG is a silicon N-channel RF MOSFET device designed for use in VHF/UHF applications. It is housed in a standard package and has a maximum frequency of 7.5GHz. This device has a low gate threshold voltage and low capacitance, making it ideal for use in high-power amplifiers and frequency converters. In addition, it has a low gate noise level, making it suitable for use in low-noise applications. It is suitable for use in a broad range of RF applications.The ARF468AG has an extremely low gate threshold voltage, which reduces the bias requirements for this device. The low gate threshold voltage allows the device to be used in both small-signal and high-frequency applications. In addition, the device has a low gate current level, which reduces the noise generated by the device.The ARF468AG is well suited for use as an RF power amplifier because it has a high linearity and low distortion. In addition, it has a low noise figure and low signal-to-noise ratio, which makes it ideal for use in digital signal processing and communications systems. The device also has a high signal-to-noise ratio and low noise figure, making it suitable for use in RF receivers. It is suitable for use in a wide range of medium and high-power amplifiers, frequency converters and general-purpose audio amplifiers.The ARF468AG has an extremely low gate capacitance, which reduces the power dissipation of the device. This device has a high switching speed and is suitable for use in high frequency applications, such as frequency conversion. In addition, it has a low gate leakage, which reduces the power dissipation and increases the operational life of the device. The device also has a high input impedance, which provides isolation between the output and the input signals.The gate-source capacitance of the ARF468AG is extremely low, which reduces the power dissipation of the device. The low gate capacitance also reduces the noise generated by the device. In addition, the device has a high output impedance, which reduces the power dissipation and improves the linearity of the device.The ARF468AG is suitable for use in a wide range of RF applications. It is well suited for use in high-power amplifiers, frequency converters and general-purpose audio amplifiers. In addition, it has a low gate noise level, making it suitable for use in low-noise applications. The device is also well suited for use in a wide range of digital signal processing and communications systems. The device is suitable for use in RF receivers and transmitters, as well as for high-power amplifiers and general-purpose audio amplifiers.The specific data is subject to PDF, and the above content is for reference
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