Allicdata Part #: | ARF477FL-ND |
Manufacturer Part#: |
ARF477FL |
Price: | $ 75.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF PWR MOSFET 500V 10A |
More Detail: | RF Mosfet 2 N-Channel (Dual) Common Source 150V 6... |
DataSheet: | ARF477FL Datasheet/PDF |
Quantity: | 25 |
1 +: | $ 68.74560 |
10 +: | $ 64.81570 |
25 +: | $ 60.88730 |
100 +: | $ 56.95910 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | 2 N-Channel (Dual) Common Source |
Frequency: | 65MHz |
Gain: | 16dB |
Voltage - Test: | 150V |
Current Rating: | 15A |
Noise Figure: | -- |
Power - Output: | 400W |
Voltage - Rated: | 500V |
Package / Case: | -- |
Supplier Device Package: | -- |
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The ARF477FL is a RF MOSFET transistor (Field Effect Transistor) that is used in various applications that require low noise and high gain. This type of transistor is also known as a MOSFET because of its unique properties, which make it ideal for use in radio frequency (RF) applications. It is also used in applications such as amplifiers, receivers and transmitters.
The ARF477FL has a maximum gate-drain voltage rating of 15V, making it well-suited for high-performance RF applications where small signals require low-noise amplification. The maximum drain current is at 140 mA, which is sufficient for many applications. The frequency range of the ARF477FL is between 100 MHz to 2.5 GHz. This is wide enough to accommodate a variety of applications from mobile communication systems to military radar.
The ARF477FL has a very low noise figure (2.5 dB), which makes it ideal for sensitive applications such as sensitive instrumentation, automotive applications and military communications. The low noise figure is achieved by the transistor’s very low gate-source capacitance, which reduces cross-talk between adjacent components. The highly linear response of the device also contributes to its low noise figure.
The ARF477FL also features a high input impedance of 50 V/μm, which allows more control over the signal being input. With an output impedances of 5 Ohm, the ARF477FL has a wide operating range, making it suitable for wide bandwidth applications.
The working principle of the ARF477FL is based on the physical principle of semiconductor tunneling. In a MOSFET transistor, a thin gate-dielectric layer exists between the gate and the other two terminals – source and drain. When a voltage is applied to the gate, electric field is created across the dielectric. This electric field creates an electric current that passes through the gate-dielectric layer and allows electrons to flow from the source to the drain.
The ARFT477FL features a low input capacitance and a high leakage current, which makes it suitable for RF applications requiring low noise and high gain. The device also features low parasitic capacitance. As a result, the device is able to handle high frequency signals without distortion or noise.
In conclusion, the ARF477FL is an ideal device for use in high-frequency applications requiring low noise and high gain. It is well-suited for use in military communications, mobile devices, and other applications requiring low-noise amplification. Its extremely linear response and low input capacitance makes it ideal for sensitive instrumentation, automotive applications and military communication systems.
The specific data is subject to PDF, and the above content is for reference
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