ARF468BG

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The ARF468BG is an advanced Radio-Frequency (RF) power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) suitable for wide-band operation with excellent power gain. It features an internally processed gate structure and optimized geometry in a 0.2micron die dimensions process technology. This allows the transistor to be driven efficiently with higher input Powers and gain necessary for wide-band applications.

The gate structure of the ARF468BG is composed primarily of silicon substrate, source/drain regions, and a combination of Polysilicon and Silicon-On-Insulator (SOI) gates. Silicon is used for the source/drain because it has a relatively low resistance that reduces resistive losses and minimizes heat dissipation. The SOI gate is used to minimize the gate-source junction capacitance, which is important in RF applications because it affects the gain of the device.

The optimized geometry of the ARF468BG provides an efficient current/voltage path, allowing it to handle higher input powers than other MOSFETs. This is accomplished by optimizing the layout of the gate electrodes and making sure that the source/drain regions are separated by a narrow channel of source/drain material. This design reduces the possibility of leakage between source/drain regions, allowing for higher powers. Additionally, the optimized geometry also improves the noise performance of the device.

The ARF468BG has a wide range of applications, including high-powered, wide-band RF power amplifiers, modulators, and attenuators. The device is also suitable for use in RF high-frequency switching and switching applications. This device is ideal for applications such as cellular base station radios, satellite communication, wireless local area networks (WLAN), and wideband communication systems.

The working principle of the ARF468BG is based on the physical phenomenon of field-effect transistor action. When a voltage is applied between the two electrodes on the gate of the transistor, a current is generated between the source and drain regions. This current is regulated by the gate voltage, which then results in the desired output current. The larger the gate voltage, the larger the output current.

In summary, the ARF468BG is an advanced Radio-Frequency (RF) power MOSFET suitable for wide-band operation with excellent power gain. It features an internally processed gate structure and optimized geometry in a 0.2micron die dimensions process technology. This allows the transistor to be driven efficiently with higher input Powers and gain necessary for wide-band applications. The device is ideal for applications such as cellular base station radios, satellite communication, wireless local area networks (WLAN), and wideband communication systems.

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