Allicdata Part #: | ARF461CG-ND |
Manufacturer Part#: |
ARF461CG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF MOSFET N-CH 1000V TO247 |
More Detail: | RF Mosfet N-Channel 50V 65MHz 15dB 150W TO-247 |
DataSheet: | ARF461CG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | N-Channel |
Frequency: | 65MHz |
Gain: | 15dB |
Voltage - Test: | 50V |
Current Rating: | 25µA |
Noise Figure: | -- |
Power - Output: | 150W |
Voltage - Rated: | 1000V |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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The ARF461CG is an N-channel depletion mode field effect transistor (MOSFET) with a low noise amplifier (LNA) and is used primarily in radio frequency (RF) applications. It is especially useful in applications that require ultra low noise, low phase noise, wide bandwidth and high dynamic range. This type of FET has been used in many different applications and is one of the most popular MOSFETs available on the market.
The ARF461CG is a MOSFET that operates in the depletion mode. This means that the drain current "flows" when the gate voltage is less than the threshold voltage and decreases when the gate voltage is greater than the threshold voltage. It also has a high input capacitance which makes it an attractive choice for high frequency applications. The ARF461CG is designed for ultra low noise performance, with a noise figure of typically 0.3dB. This low noise figure makes the ARF461CG an ideal choice for applications that require low noise, such as radio receivers, satellite receivers and television receivers.
The working principle of the ARF461CG is based on the principle of the field effect transistor (FET) which uses an electric field to control the amount of current that can flow through the device. When a voltage is applied to the gate of the FET, an electric field is created which modulates the current flow through the device. This electric field is also used to modulate or vary the frequency or amplitude of the signal being amplified. With the ARF461CG, the electric field is also used to modulate the frequency and amplitude of the RF signals being amplified, resulting in ultra low noise performance.
The ARF461CG also has an integrated LNA which allows for better linearity and higher gain performance than other types of MOSFETs. This makes the ARF461CG an ideal choice for applications such as ultra low noise amplifiers (LNAs), microwave amplifiers, digital receivers, frequency synthesizers, mixers and modulators. One of the advantages of the ARF461CG over other similar devices is that it can provide higher linearity and higher power than other devices with the same size and power consumption.
The ARF461CG is a very versatile device that is currently used in a variety of applications. It is a great choice for high frequency applications because it has a high input capacitance and provides ultra low noise performance. The integrated LNA also makes it an ideal choice for applications that require high linearity and higher power. The ARF461CG is an effective choice for many applications because it provides the best combination of size, power consumption and performance.
The specific data is subject to PDF, and the above content is for reference
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