Allicdata Part #: | ARF465BG-ND |
Manufacturer Part#: |
ARF465BG |
Price: | $ 27.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF PWR MOSFET 1200V 6A TO-247 |
More Detail: | RF Mosfet N-Channel 300V 40.68MHz 15dB 150W TO-24... |
DataSheet: | ARF465BG Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 25.44700 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 40.68MHz |
Gain: | 15dB |
Voltage - Test: | 300V |
Current Rating: | 6A |
Noise Figure: | -- |
Power - Output: | 150W |
Voltage - Rated: | 1200V |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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The ARF465BG is a packaged RF MOSFET designed to perform in a wide variety of signal handling applications. It is designed to replace bipolar transistors and IGBTs in power amplifier circuits. It offers very low on-resistance and yet still provides excellent RF signal handling performance. This makes it well-suited for use in high-frequency circuit designs.
The ARF465BG is an enhancement-mode device. This means that it is designed to operate as an amplifier or switch. When the gate voltage is negatively charged, the depletion region around the drain-source junction will be reduced and current will flow through it. Conversely, if the gate voltage is positively charged then the depletion region will increase and the device will turn off.
The ARF465BG is a 50V device with an on-resistance of 0.015Ω. This makes it suitable for operation in high-power circuits and helps to minimize power losses due to its low on-resistance rating. The breakdown voltage of the device is 50V which helps to reduce the risk of damage due to overvoltage incidents. The device has also been designed for use in high-speed circuits and has a maximum drain current rating up to 4A, giving it high power capability.
The ARF465BG is also designed for low-noise operation. This is achieved by minimizing the built-in capacitance of the device and by optimizing the transconductance of the device. The device also has a low gate-drain capacitance which helps to reduce noise and interference between stages of a circuit. This helps to ensure that the signal passes through each stage of the circuit without any distortion or interference.
The packaging of the ARF465BG helps to protect the device from physical damage which could cause the device to malfunction or fail prematurely. The TO-220 package provides the device with sufficient mechanical contact with the circuit board to help dissipate heat and electrical noise effectively. In addition, the package helps to minimize the shocks and vibration which can occur in applications where the device is subject to heavy use.
The ARF465BG can be used in a wide range of RF applications including radio transmitters, radio receivers, and broadband amplifiers. The device is also suitable for use in circuits requiring dynamic bias control, such as low noise amplifiers and envelope tracking amplifiers. The low on-resistance, high breakdown voltage, and low capacitance of the device make it well-suited for high-power, high-speed and low-noise applications.
In summary, the ARF465BG is a packaged RF MOSFET designed to replace bipolar transistors and IGBTs in power amplifiers and other circuits requiring high performance and reliability. Its low on-resistance, high breakdown voltage and low capacitance make it well-suited for high power, high-speed and low-noise applications, and its mechanical packaging helps to protect the device from physical damage. As such, the device is suitable for use in a wide range of RF applications.
The specific data is subject to PDF, and the above content is for reference
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