ARF461AG

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ARF461AG is a high voltage field effect transistor (FET) device mainly used for RF applications. This type of transistor device consists of an insulated gate surrounded by four source/drain terminals. It is designed to operate in an inherently broad frequency range, from 400 MHz to 2000 MHz, making it a suitable choice for a variety of telecommunications and consumer devices.

The ARF461AG has a maximum Drain to Source Voltage (VDDS) of 15V and a 0.25-W maximum power dissipation (PD). It provides excellent noise figure, high gain and wide bandwidth capabilities at the frequencies specified above. The device is manufactured using advanced processes, resulting in a micron-level gate overlap resulting in reduced capacitance and improved frequency response.

In terms of its application fields, the ARF461AG is mainly used in the manufacturing of high-performance RF products such as amplifiers and broadcast receivers, as well as products where low power consumption, high frequency stability, or high linearity are of primary importance, such as in CDMA applications.

Regarding its working principle, the ARF461AG works by relying on semiconductor technology for controlling the transfer of electrical current, with source and drain terminals that are insulated from one another and operate as a closed circuit. By applying a bias voltage between the source and drain terminals, a voltage gradient is generated in the channel of the device. With the application of such a bias voltage, an electron wave is formed near the surface of the channel. The wave is then modulated by an external signal, which modulates the wave’s amplitude and leads to an output current whose amplitude is the product of the wave’s modulation and the bias voltage applied.

The ARF461AG is a versatile high voltage FET designed for use in a variety of RF applications. Its combination of low power consumption, high frequency stability, reduced capacitance and excellent noise figure make it a suitable choice for a number of consumer and telecommunications products. Its working principle involves the use of semiconductor technology to create an electron wave which is then modulated by an external signal, producing an output current.

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