Allicdata Part #: | ARF448BG-ND |
Manufacturer Part#: |
ARF448BG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF FET N CH 450V 15A TO247 |
More Detail: | RF Mosfet N-Channel 150V 40.68MHz 15dB 140W TO-24... |
DataSheet: | ARF448BG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | N-Channel |
Frequency: | 40.68MHz |
Gain: | 15dB |
Voltage - Test: | 150V |
Current Rating: | 15A |
Noise Figure: | -- |
Power - Output: | 140W |
Voltage - Rated: | 450V |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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The ARF448BG transistors are a type of field-effect transistors specifically designed for radio frequency applications. It is a type of insulated-gate bipolar transistor (IGBT) designed to provide efficient operation in power converters and power amplifiers used in wireless communication systems. The ARF448BG provides two main advantages over other types of transistors: it has a much lower input capacitance than regular junction field-effect transistors and it has extremely low gate charge. This makes the device suitable for high-speed switching applications and high power amplifiers.
The ARF448BG operates as a three-terminal, positive-channel, insulated-gate field-effect transistor. Current is applied to the source terminal, which then flows to the drain terminal under the control of applied gate voltage. The gate voltage provides the necessary “gate effect,” or inversion of the channel and conduction between source and drain. When an electric field is applied at the gate interface, the channel between source and drain is inverted and the current flows in the opposite direction from the applied field. The external gate voltage can be used to control the amount of current that flows, thus allowing for convenient and efficient power control in radio frequency applications.
Theoretically, the ARF448BG can operate at up to 5 GHz, and its main advantages are its low power consumption, high efficiency, and low noise. The low power consumption is achieved through the low gate charge, which results in low gate voltage requirements and high operational speeds. This also allows for high efficiency operation, as less energy is lost as compared to other types of field-effect transistors. The low noise of the ARF448BG is also beneficial for high-frequency applications, as it produces less interference and distortion.
In terms of application fields, the ARF448BG transistors are suitable for use in power amplifiers, power converters, and wireless communication systems. They are used in a wide range of applications, including digital signal processing (DSP), wireless tracking and communication, radio astronomy, and automated control systems. The ARF448BG also finds use in high-end consumer electronics such as satellite television receiver systems and digital television receivers.
Overall, the ARF448BG is a highly efficient, low-noise, and low power consumption field-effect transistor designed specifically for radio frequency applications. It is well-suited for a wide array of applications, from powering amplifiers and converters to high-end consumer electronics, such as digital television receivers. With its low gate charge, the ARF448BG is able to operate at higher frequencies with greater efficiency.
The specific data is subject to PDF, and the above content is for reference
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