ARF466FL

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ARF 466 FL is a GaAs Field Effect Transistor (FET) specially designed for ultra-low distortion linear amplification in the VHF, UHF, and S-band frequency range. The device features a high gain fl achieved with a very low input and output impedance, a high linearity performance, along with a typical gain of over 18dB. It is well suited for automotive and industrial RF applications such as cellular and PCS telecommunication systems, and data communication systems.

ARF 466 FL offers superior linearity and reliability, delivering a gain of over 17dB at a single stage. In the gain setting version, the linearity performance is set by adjusting the input and output impedances. The device is offered in both high and low gain configurations technically, the ARF 466 FL has a typical gain of 17 dB, with a 3:1 VSWR, an isolation of more than 17 dB and an impedance of 50 ohms.

The RF FET is based on the same reliable, high-performance technology and robust process utilized in the production of other advanced RF transistors developed by the company. The device utilizes a silicon-based substrate, a relatively high input impedance, and a low operating temperature, enabling superior linearity performance at the same time.

The ARF 466 FL is suitable for a wide variety of automotive and industrial RF applications, including cellular communication systems, PCS telecommunication systems, and data communication systems. The device is compatible with PCS/GSM/WCDMA communication systems and offers superior performance in VHF, UHF, and S-band applications.

The working principle of the ARF 466 FL is based on the Field Effect Transistor (FET), also known as the metal-oxide-semiconductor (MOS) transistor. By varying the gate-to-source voltage, the current through the drain terminal is controlled. In the case of the ARF 466 FL, the gate-to-source voltage is used to control the gain of the transistor, providing linear and low distortion amplification.

The ARF 466FL is designed to guarantee a low noise operation and a fast recovery time. With its high-voltage MOSFET construction and wide environment operating range, the device offers significantly improved performance over its predecessor, the ARF 464 FL. The device is also designed for a wide variety of linear and nonlinear applications, likely seeing usage in RF power amplifiers and oscillators, as well as other linear and nonlinear applications.

In conclusion, the ARF 466F is a reliable and high-performance RF FET that can be used with confidence in many automotive and industrial applications. It is especially well-suited for VHF, UHF, and S-band applications and offers an impressive blend of high gain, low distortion, linearity performance, and high isolation.

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