Allicdata Part #: | ARF446G-ND |
Manufacturer Part#: |
ARF446G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RF PWR MOSFET 900V 6.5A TO247 |
More Detail: | RF Mosfet N-Channel 250V 40.68MHz 15dB 140W TO-24... |
DataSheet: | ARF446G Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 40.68MHz |
Gain: | 15dB |
Voltage - Test: | 250V |
Current Rating: | 6.5A |
Noise Figure: | -- |
Power - Output: | 140W |
Voltage - Rated: | 900V |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Description
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The ARF446G is a geneal purpose Radio Frequency (RF) Transistor and is part of a family of Field Effect Transistors (FETs). It is a high performance, high speed, low noise transistor suitable for a wide range of applications including RF power amplifiers and broadband amplifiers up to 6.0GHz.The ARF446G is a large area GaAs MOSFET and is manufactured using a low-cost, low-power chip foundry process. It has a high breakdown voltage of up to 28V and a maximum drain-source voltage of 24V. The device is rated for 25mA of maximum collector current at a junction temperature of 85°C. Its maximum power dissipation is 1.2W and it has a high switching speed of 1.6 nanoseconds.The ARF446G is a very versatile transistor that can be used in a wide variety of applications. It is ideally suited for use in high-frequency circuits, such as amplifiers and oscillators, where its large area and high performance make it ideal for these types of applications. It can also be used in low noise amplifiers and electronic filters, as it is a very low noise device.The ARF446G has a high input impedance, which allows for better signal control. It also has a high gain with a high current gain of 20 at a power gain of 10 at 1V. The device also has a low on-state resistance, allowing for better efficiency, and a low frequency response, which makes it ideal for use in oscillators and amplifiers.In terms of its working principle, the ARF446G acts as an amplifier using a field effect. When an input signal is applied, an electric field is created, causing the holes in the material of the transistor to move and a current to flow. This current then amplifies the input signal, resulting in an output signal with a higher gain than the input signal.The ARF446G is an excellent choice for use in a wide range of applications, thanks to its high performance and low-noise performance. From RF power amplifiers to amplifiers, filters, and oscillators, the ARF446G is a versatile and reliable choice for many electronic designs.
The specific data is subject to PDF, and the above content is for reference
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