ARF466BG Allicdata Electronics
Allicdata Part #:

ARF466BG-ND

Manufacturer Part#:

ARF466BG

Price: $ 39.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF FET N CH 1000V 13A TO264
More Detail: RF Mosfet N-Channel 150V 40.68MHz 16dB 150W TO-26...
DataSheet: ARF466BG datasheetARF466BG Datasheet/PDF
Quantity: 9
1 +: $ 35.84700
Stock 9Can Ship Immediately
$ 39.43
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: N-Channel
Frequency: 40.68MHz
Gain: 16dB
Voltage - Test: 150V
Current Rating: 13A
Noise Figure: --
Power - Output: 150W
Voltage - Rated: 1000V
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ARF466BG is a type of field-effect transistor (FET) that operates in the radio-frequency (RF) range. It is made up of a dielectric material sandwiched between two conductive plates (the drains and the source). The two plates are connected to a gate, which controls the voltage that passes through the FET.

The ARF466BG is an Enhanced GaN-on-SiC (EGO) FET, which has a high breakdown voltage, high-frequency operation, and reliable cycling characteristics. EGO FETs are typically used in RF power amplifiers, power controllers, and switching circuits. This makes them well-suited for applications that require high-power amplitudes and high frequency operation, such as RF transmission and cellular networks.

The ARF466BG has an operating temperature range of -55°C to +150°C. It supports drain currents up to 50A and is rated for VDSS (drain-to-source voltage) up to 140V. Furthermore, it has an on-resistance rating of 40mΩ and a maximum power dissipation capability of 73W.

The working principle of the ARF466BG involves the gate, the source, and the drain. When the gate voltage is below the threshold voltage (VT) of the device, the device is off, and no current flows between the source and the drain. When the gate voltage is higher than VT, electrons flow between the source and the drain and the device turns on. This is known as the drain current mode of operation. The gate-source current (IGSS) is the current that flows between the gate and the source. The drain current is controlled by the gate-source voltage (VGS) which is the voltage difference between the gate and the source.

The ARF466BG is a versatile device and can be used in a variety of applications. These include high power and frequency amplifiers, power controllers, and switching circuits. It is ideally suited for high voltage and high frequency operation, making it well-suited for RF power transmission and cellular networks. Furthermore, its wide operating temperature range and high power dissipation capability make it a great choice for applications that require reliable operation in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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