| Allicdata Part #: | ARF466BG-ND |
| Manufacturer Part#: |
ARF466BG |
| Price: | $ 39.43 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | RF FET N CH 1000V 13A TO264 |
| More Detail: | RF Mosfet N-Channel 150V 40.68MHz 16dB 150W TO-26... |
| DataSheet: | ARF466BG Datasheet/PDF |
| Quantity: | 9 |
| 1 +: | $ 35.84700 |
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Active |
| Transistor Type: | N-Channel |
| Frequency: | 40.68MHz |
| Gain: | 16dB |
| Voltage - Test: | 150V |
| Current Rating: | 13A |
| Noise Figure: | -- |
| Power - Output: | 150W |
| Voltage - Rated: | 1000V |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | TO-264 |
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ARF466BG is a type of field-effect transistor (FET) that operates in the radio-frequency (RF) range. It is made up of a dielectric material sandwiched between two conductive plates (the drains and the source). The two plates are connected to a gate, which controls the voltage that passes through the FET.
The ARF466BG is an Enhanced GaN-on-SiC (EGO) FET, which has a high breakdown voltage, high-frequency operation, and reliable cycling characteristics. EGO FETs are typically used in RF power amplifiers, power controllers, and switching circuits. This makes them well-suited for applications that require high-power amplitudes and high frequency operation, such as RF transmission and cellular networks.
The ARF466BG has an operating temperature range of -55°C to +150°C. It supports drain currents up to 50A and is rated for VDSS (drain-to-source voltage) up to 140V. Furthermore, it has an on-resistance rating of 40mΩ and a maximum power dissipation capability of 73W.
The working principle of the ARF466BG involves the gate, the source, and the drain. When the gate voltage is below the threshold voltage (VT) of the device, the device is off, and no current flows between the source and the drain. When the gate voltage is higher than VT, electrons flow between the source and the drain and the device turns on. This is known as the drain current mode of operation. The gate-source current (IGSS) is the current that flows between the gate and the source. The drain current is controlled by the gate-source voltage (VGS) which is the voltage difference between the gate and the source.
The ARF466BG is a versatile device and can be used in a variety of applications. These include high power and frequency amplifiers, power controllers, and switching circuits. It is ideally suited for high voltage and high frequency operation, making it well-suited for RF power transmission and cellular networks. Furthermore, its wide operating temperature range and high power dissipation capability make it a great choice for applications that require reliable operation in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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ARF466BG Datasheet/PDF