ARF463AG

Series:	--
Packaging:	Bulk
Part Status:	Active
Transistor Type:	N-Channel
Frequency:	81.36MHz
Gain:	15dB
Voltage - Test:	125V
Current Rating:	9A
Noise Figure:	--
Current - Test:	50mA
Power - Output:	100W
Voltage - Rated:	500V
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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IntroductionThe ARF463AG is a N-Channel RF power MOSFET device developed specifically for use in high-power applications in the radio frequency (RF) range. It is a power-type Device, having a drain to source voltage rating of up to 30V and Drain current up to 12A. This device helps to save DC power while maintaining RF power output at the same time offering superior linearity and wider bandwidth. The ARF463AG is designed to handle high peak voltages, rapid rise and fall times, is protected from electrostatic discharge (ESD) damage, and has a rugged and reliable structure when working in harsh environmental conditions. Application FieldThe ARF463AG offers a wide range of applications. It is designed for use in radio transceivers, public address amplifiers, mobile phone base transmitters, in-building repeaters, linear amplifiers and other automotive and industrial applications. It is or suitable for use in Automated Test Equipment (ATE) , and high-power RF sampling systems. In automotive and industrial applications, the ARF463AG is used in power transmissions, unlicensed industrial, scientific and medical (ISM) and various other frequency bands. Additionally, it is used in high-power switching circuits, power MOSFET bridges, and various other circuit designs which require high power to be switched efficiently. This device offers superior RF performance and linearity at high peak voltages. Working Principle The ARF463AG is a N-Channel RF power MOSFET, with a drain to source voltage rating of up to 30V and a drain current capability of up to 12A. It has a rugged and reliable structure and is protected from electrostatic discharge (ESD) damage. It operates on the principle of voltage controlling current flow. Essentially, the ARF463AG consists of a drain (D), an insulated gate (G) and a source (S), with a metal-oxide-semiconductor (MOS) junction underlying these terminals. The source and drain are connected to the voltage source, while the gate is connected to the control voltage (Vg). When the control voltage is below the threshold voltage (Vth) the device is in a non-conducting state and the drain is isolated from the source. Once the control voltage increases to the threshold level, the device enters a conducting state and the drain is connected to the source. However, as the control voltage continues to increase beyond the threshold voltage, the drain and source become reversely biased and the drain current is decreased. The ARF463AG is designed for operation in the radio frequency (RF) range, with the key feature of its design being the drain to source breakdown voltage. The device has a robust power handling capability and is designed to maintain wide RF bandwidth while offering superior linearity at high peak voltages. ConclusionThe ARF463AG is an N-channel RF power MOSFET device developed specifically for use in high-power applications in the radio frequency (RF) range. Due to its robust power handling capability, excellent linearity and wide bandwidth, the ARF463AG finds wide range of application in different industries, including automotive and industrial applications, radio transceivers, public address amplifiers, and mobile phone base transmitters. In operation, the ARF463AG works on the principle of voltage controlling current flow, with a drain to source voltage rating of up to 30V and Drain current capability of up to 12A.

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