| Allicdata Part #: | AUIRF7103Q-ND |
| Manufacturer Part#: |
AUIRF7103Q |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET 2N-CH 50V 3A 8SOIC |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 50V 3A 2.4W Surfac... |
| DataSheet: |  AUIRF7103Q Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | HEXFET® |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 50V |
| Current - Continuous Drain (Id) @ 25°C: | 3A |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 255pF @ 25V |
| Power - Max: | 2.4W |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
Description
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The AUIRF7103Q is a monolithic high-voltage array containing four N-channel enhancement mode MOSFETs. It is housed in a surface mountable package and is specifically designed for applications requiring efficient, low on-resistance, power switch and low voltage applications.
The AUIRF7103Q is commonly used in modern power electronics design, being used in high power DC-DC and AC-DC converter designs, loop filter circuits in switching power supplies and other applications where efficient power switching is required.
The AUIRF7103Q features low on-resistance, low gate charge and low anode-cathode junction capacitance. It is also designed to provide high voltage and high drain current performance in an integrated package, making it one of the best power switch components for use in high current and high-speed designs. In addition, the AUIRF7103Q has a substantially lower on-voltage than a comparable MOSFET due to its low gate charge.
The AUIRF7103Q has four independent N-channel enhancement mode MOSFETs that are internally interconnected as a single phase half-bridge. Each MOSFET has an individual gate voltage and drain voltage lines, allowing for separate control of each phase of the array. This allows the AUIRF7103Q to be used in applications that require high power switching, such as DC-DC and AC-DC converter designs. The device also has an integrated body diode, which eliminates the need for an extra diode in some applications.
The AUIRF7103Q features a wide range of gate and drain voltage levels, making it suitable for a variety of different applications. Its low charge FET and low on-voltage circuitry also make the device suitable for high-speed applications. When used for power switching and switched mode power supplies, the device has a low total gate charge and a low total Vds rating, allowing for higher efficiency and longer device life. Additionally, the AUIRF7103Q is designed to handle high temperature and high voltage operation.
In summary, the AUIRF7103Q is an ideal solution for applications such as DC-DC and AC-DC converters, loop filter circuits in switching power supplies, switch mode power supplies, and other applications requiring efficient power switching. The device is designed with low charge FET and low on-voltage circuitry, providing high power efficiency, high reliability and long device life. Its wide range of gate and drain voltage levels make the device suitable for a variety of different applications.
The AUIRF7103Q is commonly used in modern power electronics design, being used in high power DC-DC and AC-DC converter designs, loop filter circuits in switching power supplies and other applications where efficient power switching is required.
The AUIRF7103Q features low on-resistance, low gate charge and low anode-cathode junction capacitance. It is also designed to provide high voltage and high drain current performance in an integrated package, making it one of the best power switch components for use in high current and high-speed designs. In addition, the AUIRF7103Q has a substantially lower on-voltage than a comparable MOSFET due to its low gate charge.
The AUIRF7103Q has four independent N-channel enhancement mode MOSFETs that are internally interconnected as a single phase half-bridge. Each MOSFET has an individual gate voltage and drain voltage lines, allowing for separate control of each phase of the array. This allows the AUIRF7103Q to be used in applications that require high power switching, such as DC-DC and AC-DC converter designs. The device also has an integrated body diode, which eliminates the need for an extra diode in some applications.
The AUIRF7103Q features a wide range of gate and drain voltage levels, making it suitable for a variety of different applications. Its low charge FET and low on-voltage circuitry also make the device suitable for high-speed applications. When used for power switching and switched mode power supplies, the device has a low total gate charge and a low total Vds rating, allowing for higher efficiency and longer device life. Additionally, the AUIRF7103Q is designed to handle high temperature and high voltage operation.
In summary, the AUIRF7103Q is an ideal solution for applications such as DC-DC and AC-DC converters, loop filter circuits in switching power supplies, switch mode power supplies, and other applications requiring efficient power switching. The device is designed with low charge FET and low on-voltage circuitry, providing high power efficiency, high reliability and long device life. Its wide range of gate and drain voltage levels make the device suitable for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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