AUIRF7304QTR Allicdata Electronics
Allicdata Part #:

AUIRF7304QTR-ND

Manufacturer Part#:

AUIRF7304QTR

Price: $ 0.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 20V 4A 8SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 4.3A 2W Surfac...
DataSheet: AUIRF7304QTR datasheetAUIRF7304QTR Datasheet/PDF
Quantity: 1000
4000 +: $ 0.50117
Stock 1000Can Ship Immediately
$ 0.55
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The AUIRF7304QTR is a vertical power MOSFET Array consisting of four individually addressed N-channel enhancement mode power MOSFET devices in a single package. It is primarily used in switching applications such as DC to DC converters, battery chargers, AC-DC converters, and general-purpose DC motor control. In addition, this device can be used for driving multiple high-side and low-sidecascode switches, low-side load switches, high-side switches, and driver integrated circuits.

The AUIRF7304QTR is designed to minimize switching losses and minimize the need for lower side accessories. The dual isolated source pins (S1 and S2) may also be used for LED drivers, LED contactors, and LED drivers with PMOS current control. Each MOSFET has a drain (D1-D4), a source (S1, S2), and a control gate (G1-G4) terminal. When a positive voltage is applied to the Gate, current flows freely through the device. This enables high frequency and high voltage switching with minimal secondary loss.

The AUIRF7304QTR is ideal for automotive, computer, communications and consumer applications requiring low loss and effective thermal management. It has an operating temperature range of -40°C to +12°C and can handle up to 8A of continuous current. Its low input and output on-state resistance ensures minimal power losses and its low gate threshold voltage makes it suitable for operation in low voltage environments.

The working principle of the AUIRF7304QTR is based on the use of an N-channel enhancement mode power MOSFET.The four MOSFETs in the package each have an individual control gate that is connected to the Drain of the same MOSFET. When a positive voltage (Vg) is applied to the Gate of the MOSFET, the MOSFET switches with very little voltage drop resulting in minimal power loss. When the Gate voltage is ramped up, the Drain-Source voltage of the MOSFET will become negative and the MOSFET will turn off.

In addition, each power MOSFET in the package has an enclosed floating source terminal. This aids in controllability by allowing independent voltage control of each MOSFET. It also allows them to be connected in either parallel or series configurations to form a high-side or low-side switch. This allows for increased power handling capability and increased ESD protection.

The AUIRF7304QTR is suited for applications that require high frequency and high voltage switching with negligible losses. It is well-suited for DC-DC converters, battery chargers, AC-DC converters, and general-purpose DC motor control. It has a low threshold voltage that makes it suitable for operation in low voltage environments and its dual isolated source terminal provides independent voltage control of each MOSFET. It is also ideal for automotive, computer, communications and consumer applications that require high performance, low power loss, and effective thermal management.

The specific data is subject to PDF, and the above content is for reference

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