AUIRFS8407TRL

Gate Charge (Qg) (Max) @ Vgs:	225nC @ 10V
Base Part Number:	IRFS8407
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	230W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7330pF @ 25V
Vgs (Max):	±20V
Series:	HEXFET®
Vgs(th) (Max) @ Id:	4V @ 150µA
Rds On (Max) @ Id, Vgs:	1.8 mOhm @ 100A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	195A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<div><p>The AUIRFS8407TRL is a high voltage, fast switching, and easy to use single N-channel MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). This transistor has a low on state resistance, a wide voltage range, and an extremely low leakage current.</p><p>The AUIRFS8407TRL MOSFET is ideal for switching applications where low on-resistance and high frequency operation are needed. It is often used in high voltage systems, such as automotive power control and lighting, as well as for switching applications such as instrumentation.</p><p>The AUIRFS8407TRL is a full-bridge MOSFET, which means that it is capable of driving two outputs simultaneously. This makes it suitable for a variety of applications, including brushless DC motors, switching power supplies, and lighting control.</p><p>The main feature of the AUIRFS8407TRL is that it has a built-in gate driver circuit, which makes it easier to use than other transistors. This gate driver circuit helps the user get the most out of the transistor by providing accurate control of the output signal. It also helps reduce switching losses and allows for higher switching frequencies.</p><p>The AUIRFS8407TRL has a wide operating temperature range (-55°C to +150°C), a high peak power rating (up to 5A), and a low RDS(ON) value (as low as 1.2 ohms). It is also protected against transient voltage spikes, making it suitable for use in automotive applications.</p><p>The AUIRFS8407TRL has a low gate threshold voltage (1.2V typical) and low gate charge (4nC typical). This means that it requires less power to drive the gate and is therefore more suitable for applications needing high frequency switching.</p><p>The working principle of the AUIRFS8407TRL is based on the principle of electrostatic charge concentration. When a voltage is applied to the gate, a conductive channel is created between the source and the drain. This allows current to flow from the source to the drain, thus switching on the transistor.</p><p>The AUIRFS8407TRL is an ideal choice for a variety of high voltage applications. It is easy to use, offers a low on-resistance and low gate charge, and has a wide temperature range and high peak power rating. This makes it suitable for switching applications in a wide range of applications.</p></div>

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