Allicdata Part #: | AUIRF7342QTR-ND |
Manufacturer Part#: |
AUIRF7342QTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 55V 3.4A 8SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 55V 3.4A 2W Surfac... |
DataSheet: | AUIRF7342QTR Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101, HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 25V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The AUIRF7342QTR is an enhancement type MOSFET array that has been specifically designed to provide excellent switching performance in a small package size. The device consists of a two stage cascaded arrangement consisting of four independent N-channel MOSFET devices. It is this two stage cascade arrangement which gives the AUIRF7342QTR the capability to reduce voltage drops and be able to switch inductive loads quickly and efficiently.With the AUIRF7342QTR, the four MOSFETs are contained in a single package which helps to reduce the overall circuit footprint while increasing the speed of assembly and testing. The AUIRF7342QTR also features a built-in thermal protection which ensures that the device does not overheat when being used in a high power application.The main application field of the AUIRF7342QTR array is in switching applications requiring fast switching speeds. These applications include automotive electronics, industrial electronics, and computer peripherals. The AUIRF7342QTR array can also be used in digital and analog circuits such as microprocessor and memory circuits, and digital power conversion systems.The working principle of the AUIRF7342QTR array is based on the four individual MOSFETs which are connected in a two stage cascade arrangement. This arrangement is beneficial as it allows for fast switching speeds and lower voltage drops when switching inductive loads. When connected to a gate voltage, the MOSFETs will turn on and conduct current. As the gate voltage is decreased, the MOSFETs will turn off and dissipate heat. This allows the device to be used in high power applications without overheating.The AUIRF7342QTR array is suitable for use in a variety of applications due to its small package size and excellent switching performance. The device is also extremely versatile, making it suitable for many different design configurations. When selecting a suitable package for the AUIRF7342QTR array, it is important to consider the application voltage, peak power, and operating temperature range of the application to ensure that the MOSFET array can meet the required specifications.Overall, the AUIRF7342QTR array is an excellent choice for applications requiring fast switching speeds and low voltage drops when switching inductive loads. With the implemented thermal protection and low package size, the AUIRF7342QTR MOSFET array is well-suited for applications in automotive electronics, industrial electronics, computer peripherals, digital and analog circuits, and digital power conversion systems.
The specific data is subject to PDF, and the above content is for reference
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