Allicdata Part #: | AUIRF5210STRLTR-ND |
Manufacturer Part#: |
AUIRF5210STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 38A D2PAK |
More Detail: | P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surfa... |
DataSheet: | AUIRF5210STRL Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2780pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 38A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The AUIRF5210STRL is a single N-channel, enhancement-mode, Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor is used in a variety of circuits, ranging from simple voltage regulating circuits to complex switching applications such as motor drivers and power management. In this article, we will discuss the application field and working principle of the AUIRF5210STRL.
Application Field of the AUIRF5210STRL
The AUIRF5210STRL is commonly used in low-side, high-side, and cascode structures. This MOSFET is also suitable for use in applications such as high-density and high-power DC/DC converters, uninterruptable power supplies (UPS), switching power supplies and motor drives. Additionally, this transistor is excellent for use in battery-powered applications, as it provides high efficiency and low switching loss compared to traditional bipolar junction transistors (BJTs).
Working Principle of the AUIRF5210STRL
At the heart of the AUIRF5210STRL is a metal oxide semiconductor field effect transistor (MOSFET). This type of transistor is composed of a gate, a source and a drain. These three terminals are used to control the current that can flow between the source and the drain. The gate-source voltage (VGS) controls the drain current (ID). When the VGS voltage is low, the gate-source junction is prevented from being forward biased, and no current can flow through the MOSFET. As the VGS voltage increases, the gate-source junction becomes forward biased and the current begins to flow. Once the VGS voltage reaches a certain threshold, the drain current will reach saturation. The maximum current that can be supported by the MOSFET is determined by its current handling capability.
The AUIRF5210STRL has a dynamic resistance (rds(on)) of 0.0062 ohms, with a maximum gate-source voltage of 20 volts. It also has a maximum drain-source voltage (VDS) of 25V and a drain current (ID) of 3A. This MOSFET is suitable for a wide range of applications, ranging from low-power switching to high-power motor control.
In summary, the AUIRF5210STRL is a single N-channel MOSFET that can be used in a variety of applications. Its low voltage threshold, low dynamic resistance, and high current handling capability make it ideal for use in high-density and high-power applications.
The specific data is subject to PDF, and the above content is for reference
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