AUIRF2804STRL7P Allicdata Electronics
Allicdata Part #:

AUIRF2804STRL7P-ND

Manufacturer Part#:

AUIRF2804STRL7P

Price: $ 1.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 320A D2PAK-7
More Detail: N-Channel 40V 240A (Tc) 330W (Tc) Surface Mount D2...
DataSheet: AUIRF2804STRL7P datasheetAUIRF2804STRL7P Datasheet/PDF
Quantity: 1000
1 +: $ 1.92000
10 +: $ 1.86240
100 +: $ 1.82400
1000 +: $ 1.78560
10000 +: $ 1.72800
Stock 1000Can Ship Immediately
$ 1.92
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device Package: D2PAK (7-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AUIRF2804STRL7P Power MOSFET is a single N-channel enhancement-mode device specially designed for high-voltage switching applications. It features very low gate charge and fast switching performance while providing good on-state drain-source characteristics. This makes it suitable for applications such as switching power supplies, inverters and motor drives.

The AUIRF2804STRL7P is constructed using advanced MOSFET technology that allows it to operate at a high voltage of 600V and a drain current of 24A. It also has a low RDS(on) of 0.060ohm maximum. Its gate-to-source voltage is rated between -10V and +7V. This makes the device very suitable for high-voltage switching applications.

The AUIRF2804STRL7P has a very low maximum gate charge of 9.6nC which helps reduce switching losses. It also has a fast switching speed of 20ns that helps reduce electromagnetic interference (EMI) and power loss. In addition, it also has a low current On-state resistance (RDS(on)) of 0.060ohm typical. This makes the device ideal for applications that require high power with switching speed and low losses.

The working principle of the AUIRF2804STRL7P is that when a positive voltage is applied to the gate, the MOSFET will start to "open" and allow electrical current to flow from the source to the drain. As the positive voltage increases, the MOSFET will continue to switch on and allow the current to flow. The current flow is proportional to the gate voltage. When the gate voltage is decreased, the MOSFET will "close" and stop the current flow.

The AUIRF2804STRL7P can be used in a variety of applications. It is commonly used in Switch Mode Power Supplies (SMPS) and motor control applications due to its fast switching speed and low losses. It is also used in high power switching applications such as solar inverters. In addition, it can be used in high-voltage switching applications such as industrial automation, LED drivers and power amplification.

In summary, the AUIRF2804STRL7P is a single N-channel power MOSFET that is specially designed for high-voltage switching applications. It has a high voltage rating of 600V, a low RDS(on) of 0.060ohm maximum, and a low gate charge of 9.6nC. It also has a fast switching speed of 20ns, low current levels and low switching losses. This makes the AUIRF2804STRL7P perfect for applications that require fast switching speed, low losses and high power.

The specific data is subject to PDF, and the above content is for reference

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