AUIRFP4568-E Allicdata Electronics
Allicdata Part #:

AUIRFP4568-E-ND

Manufacturer Part#:

AUIRFP4568-E

Price: $ 5.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 150V 171A TO247
More Detail: N-Channel 150V 171A (Tc) 517W (Tc) Through Hole TO...
DataSheet: AUIRFP4568-E datasheetAUIRFP4568-E Datasheet/PDF
Quantity: 1000
400 +: $ 5.27861
Stock 1000Can Ship Immediately
$ 5.87
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 517W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10470pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The model AUIRFP4568-E is a single transistors family of field effect transistors (FETs). It belongs to the FET family and the MOSFETs-Single category, and has a wide range of applications in electronic circuits. This article will discuss the application of this model and its working principle.

First, let us discuss the application of AUIRFP4568-E transistors. This model is primarily used to control power flow in high power applications. It can be used to switch and amplify signals in audio and video circuits, as well as provide voltage stabilization in power supply circuits. This transistor can also be used in automotive electrical systems, such as to switch signals and control the current flow.

The AUIRFP4568-E transistor can also be used in RF applications, as it has a high breakdown voltage and a fast switching time. It is suitable for use in radio receivers, digital audio transmission and other low-power applications.

Now let us look at the working principle of the AUIRFP4568-E transistor. This model has three different terminals; the gate, the drain and the source. The gate acts as a switch, while the drain and source are connected to the power supply of the circuit to control the current flow. When the gate voltage is applied, the electrons in the semiconductor channel between the source and the drain are repelled, creating a channel that allows current to flow between the two terminals. The current through the channel can be controlled by adjusting the gate voltage.

When the voltage at the gate rises, the channel gets wider and more current can flow through it. Conversely, when the voltage at the gate decreases, the channel gets narrower and the current decreases. The AUIRFP4568-E transistor can also be used in a linear mode to amplify signals. In this mode, the gate voltage is changed in order to vary the amount of current flowing through the channel, thus amplifying the signal.

In conclusion, the AUIRFP4568-E is a versatile single-transistor FET, suitable for many different electrical applications. Its fast switching time and high breakdown voltage make it ideal for RF applications, while its linear operation allows it to be used to amplify signals. Moreover, its ability to control power flow makes it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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