Allicdata Part #: | AUIRF2903ZS-ND |
Manufacturer Part#: |
AUIRF2903ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 235A D2PAK |
More Detail: | N-Channel 30V 160A (Tc) 231W (Tc) Surface Mount D2... |
DataSheet: | AUIRF2903ZS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 231W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6320pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The AUIRF2903ZS is a single, 100V, 55mΩ, logic level, and N-Channel Power MOSFET, designed to optimize switching performance. This MOSFET is built on the industry-standard SuperSOT™-8 package to give it a compact and cost-effective form factor. Its enabled with cutting-edge technologies for efficient power management, including integrated heat dissipation, optimized gate charge, and low threshold voltage.
The AUIRF2903ZS is suitable for a wide range of applications. It is often used in switched-mode power supplies, automotive, and consumer power applications. This MOSFET can be used to provide power switching in a variety of circuits, either DC or AC. Additionally, this MOSFET can also be used for lighting dimming applications and motor control.
The AUIRF2903ZS works on a principle called metallic field effect, or METFET. This MOSFET requires an external gate-source voltage, Vgs, and a bias current, Igs, to control the current flow through the channel. When the voltage and current are applied, the P-channel and N-channel FETs on the die will turn the resistance of the channel on and off. This resistance is directly proportional to the applied voltage.
When the extra voltage and current is not applied, the resistance of the channel is at its minimum level (about 55mΩ). As such, this MOSFET can be used as a low-resistance, high current switch in a wide variety of applications.
In addition to its high current ability, the AUIRF2903ZS is also equipped with advanced gate charge technology. This technology ensures that the gate charge voltage remains constant when switching high load currents. This allows the MOSFET to switch reliably with reduced losses and improved efficiency.
The AUIRF2903ZS is also popular due to its integrated heat dissipation capability. This allows it to maintain its switching performance while continuously dissipating heat. The combination of its high current capability, low on-resistance, and heat dissipation capability makes the AUIRF2903ZS an ideal solution for a wide range of switching applications.
To summarize, the AUIRF2903ZS is a single, 100V, 55mΩ, logic level N-Channel Power MOSFET. It features an integrated heat dissipation capability, optimized gate charge, and low threshold voltage. It is suitable for use in switched-mode power supplies, automotive and consumer power applications, lighting dimming, and motor control applications. It works on the principle of METFET and can handle high load currents without sacrificing efficiency.
The specific data is subject to PDF, and the above content is for reference
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