AUIRF7379Q

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AUIRF7379Q is a three-channel, two-level MOSFET (metal oxide semiconductor field effect transistor) array. It is a type of transistor known as a field-effect transistor (FET) that consists of several interconnected individual MOSFETs, making it potentially more efficient than a single MOSFET.

The AUIRF7379Q is ideal for use in motor drive applications. It offers very low on-resistance, which results in exceptionally low power loss. This makes the device well-suited for applications that require linear control of motor speed. It can also be used for power cycling in switching power supplies, as well as in industrial controllers, inverters, and other power devices.

The working principle of the AUIRF7379Q is quite simple. When a voltage is applied to the gate (G) of the transistor, electrons are repelled from the gate and attracted to the source (S). This causes a current to flow between the source and the drain (D). The current is proportional to the voltage applied to the gate and is known as the drain-to-source current (IDS). By varying the voltage applied to the gate, the amount of current flowing between the drain and the source can be controlled.

The AUIRF7379Q can also be used in other applications, such as high-side switch control, logic level translation, and PWM control. It is also capable of providing an adjustable gate threshold voltage and an adjustable range of gate current (IGss). Overall, the AUIRF7379Q is relatively easy to configure and use, and its performance and features make it an ideal choice for many motor drive and other power applications.

The specific data is subject to PDF, and the above content is for reference