AUIRF7319QTR Allicdata Electronics
Allicdata Part #:

AUIRF7319QTR-ND

Manufacturer Part#:

AUIRF7319QTR

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N/P-CH 30V 8SOIC
More Detail: Mosfet Array N and P-Channel 30V 6.5A, 4.9A 2W Sur...
DataSheet: AUIRF7319QTR datasheetAUIRF7319QTR Datasheet/PDF
Quantity: 1000
1 +: $ 0.40800
10 +: $ 0.39576
100 +: $ 0.38760
1000 +: $ 0.37944
10000 +: $ 0.36720
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 4.9A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The AUIRF7319QTR is a power MOSFET Profet (PressFET) array which combines the fast logic and performance of a MOSFET with the simple gate drive of a bi-directional switch. It is a monolithic integrated circuit in a 4x3 dual-in-line package with four N-channel power MOSFETs, two N-channel Profets, and two P-channel Profets.

The AUIRF7319QTR is categorized as a Transistor - FETs, MOSFETs - Arrays because it consists of multiple discrete transistors integrated on a single die. Each transistor in the array is composed of a number of other transistors that produce a desired circuit in order to operate. In the case of the AUIRF7319QTR, the four N-channel power MOSFETs each have 12 transistors, the two P-channel Profets have 8 transistors, and the two N-channel Profets have 8 transistors each, providing a total of 40 transistors altogether.

The AUIRF7319QTR array has a wide variety of application fields, ranging from automotive and industrial applications, to communications, consumer electronics, and computing applications. In automotive applications, it can be used to switch gates when controlling powertrain, immobilizers and vehicle access systems. In industrial applications, the array is well suited for controlling locally switched signal and power connections in factory automation systems, machine tools, and robotic applications. In a communications setting, the array can be used as a signal switch in cellular phones, and other mobile devices, as well as in network hubs, bridges, and routers. In consumer and computing applications, the array is highly suitable for use in digital audio and video systems, as well as memory schemes, monitors, scanners, and other peripheral devices.

When it comes to the working principle of the AUIRF7319QTR array, it relies on the Zero Gate-Voltage Drain Current (ZGVDC) technology to reduce power consumption and increase power efficiency. This technology works by keeping the gate voltage at a constant value, which reduces the gate voltage swing, thus consuming less power and resulting in increased power efficiency. Additionally, the array also uses a low threshold voltage to reduce power consumption, by allowing the gate voltage to start at a lower value, which means less power is needed to turn it on. Finally, the gate drive circuit allows the array to be controlled with a simple gate signal, which reduces the complexity of the circuit.

In conclusion, the AUIRF7319QTR is an advanced power MOSFET Profet array which combines the fast logic and performance of a MOSFET with the simple gate drive of a bi-directional switch. It is categorized as a Transistor - FETs, MOSFETs - Arrays due to the presence of multiple discrete transistors integrated on a single die, and it has multiple application fields, ranging from automotive and industrial applications, to communications, consumer electronics, and computing applications. The AUIRF7319QTR works using three key technologies: the Zero Gate-Voltage Drain Current (ZGVDC) technology, a low threshold voltage, and a simple gate drive circuit.

The specific data is subject to PDF, and the above content is for reference

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