Allicdata Part #: | AUIRL1404S-ND |
Manufacturer Part#: |
AUIRL1404S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 160A D2PAK |
More Detail: | N-Channel 40V 160A (Tc) 3.8W (Ta), 200W (Tc) Surfa... |
DataSheet: | AUIRL1404S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 95A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.3V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The AUIRL1404S is a metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in a wide range of applications. The device features very low on-resistance and good switching characteristics, making it an excellent choice for low-noise operation. It also provides a large amount of output current and a wide range of gate capacitances, allowing it to be used in a variety of applications.
The AUIRL1404S is a single-channel MOSFET, meaning it has a single gate terminal. The gate is where the voltage for controlling the device\'s on/off status is applied. When a voltage is applied to the gate, the gate attracts electrons from the source and drain regions, forming a conducting channel between the source and drain. When no voltage is applied to the gate, no channel is formed and the device is off.
The AUIRL1404S is designed for use in a variety of applications, including power switches, motor drivers, power management, and power conversion. It can also be used for low frequency signal conditioning, such as filtering and mixing applications. The device is especially well-suited for use in switching power supplies, as it has a low on-resistance and can handle large amounts of current. Its low-noise characteristics make it an excellent choice for noise-sensitive applications.
The AUIRL1404S has a maximum drain-source voltage of 30V, a maximum drain current of 4A, and a maximum gate-source voltage of ±20V. Its on-resistance is very low, ranging from 0.13 ohms at 4V to 0.21 ohms at 10V. This low resistance allows the device to achieve high efficiencies in switching power supplies. It also features a low total gate charge, providing faster switching and better losses.
The AUIRL1404S is designed for use in both low and high-temperature environments. It is rated for junction temperatures of up to 175°C, making it an excellent choice for use in applications where high temperatures are encountered. The device also features an increased reliability due to its low drain-source on-resistance and gate-source charge.
The AUIRL1404S provides excellent switching performance at high frequencies, making it suitable for high-speed signal conditioning applications. The device also has a good noise immunity, ensuring reliable operation in noisy environments. Additionally, the device has a gate-source breakdown voltage of 30V, a drain-source breakdown voltage of 401V, and a gate-drain breakdown voltage of 60V.
In summary, the AUIRL1404S is an excellent single-channel MOSFET designed for use in a variety of applications. It has low on-resistance and good switching characteristics, making it an excellent choice for noise-sensitive applications. It is also suitable for use in high temperature environments, and provides excellent switching performance at high frequencies. With its wide range of gate capacitances, the AUIRL1404S is an excellent choice for applications such as power switching, power management, motor drivers, and power conversion.
The specific data is subject to PDF, and the above content is for reference
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