AUIRS21271S

Current - Peak Output (Source, Sink):	290mA, 600mA
Base Part Number:	AUIRS21271S
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ):	80ns, 40ns
High Side Voltage - Max (Bootstrap):	600V
Input Type:	Non-Inverting
Series:	Automotive, AEC-Q100
Logic Voltage - VIL, VIH:	0.8V, 2.5V
Voltage - Supply:	9 V ~ 20 V
Gate Type:	IGBT, N-Channel MOSFET
Number of Drivers:	1
Channel Type:	Single
Driven Configuration:	High-Side
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMIC - Gate Drivers

The AUIRS21271S is an efficient and high-performance gate driver which is especially designed to drive Si, SiC, or GaN power MOSFETs and IGBTs used in high-frequency switched-mode power systems. It features wide operating temperature range, low propagation delay and low quiescent current. This device has self protection and is suitable for driving high power MOSFETs, DMOS transistors, and IGBTs in many applications such as automotive, industrial, and consumer .The AUIRS21271S comes in TSSOP packages and includes independent gate driver channels for each device with the corresponding external fast free wheeling diodes. It offers high dV/dt capability and fast transient response for driving high-speed switching circuits. Additionally, it functions as a glitchless Crowbar Shutdown or Drive Failure Update into the output pin with a junction temperature limit of 60°C. It is also suitable for safety critical applications due to its low propagation delay, high accuracy, and deterministic response.This device can provide gate driving capability in the range of ±12V and is capable of driving load up to 5A. It also offers gate open-drain feature which can inactive the high side FET and can be used to control the system. The DC parameters of this device consists of operating temperature ( -40°C to 125°C), supply voltage (3.3V to 5V), supply current (200mA Max), load current ( 5A), and propagation delay (Max 2µs).The AUIRS21271S has two external RC-circuits connected to the gate output. This creates a suitable initial charge for each MOSFET or IGBT connected to the gate output during high-speed switching operations. The RC-circuit can be externally adjusted for low propagation delay at high frequency. The high side (CS1) and low side (CS2) gates are controlled by the logic inputs EN1 and EN2. Both are active high positive logic, when these inputs are high the corresponding gate output (HS, LS) will be enabled.The AUIRS21271S device has a built-in voltage boost architecture that allows the internal gate drive to reach higher peak voltages while maintaining a constant output current. This, in turn, protects the MOSFET or IGBT from failure due to excessive voltage and also keeps the switching losses low for high efficiency and reliability.The built-in fault protection of the AUIRS21271S includes overvoltage protection, overcurrent protection, undervoltage protection, and overtemperature protection. This improves the reliability of the system by reducing the chances of failure due to sudden changes in the system environment.In summary, the AUIRS21271S gate driver provides efficient and high-performance driving capability to MOSFETs and IGBTs in a wide range of applications. It has a wide operating temperature range, low propagation delay and low quiescent current, and additional features like output buffering and protection, overvoltage and overtemperature protection. This makes it suitable for automotive, industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description