AUIRF7313Q

Series:	HEXFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	6.9A
Rds On (Max) @ Id, Vgs:	29 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	755pF @ 25V
Power - Max:	2.4W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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Introduction
The AUIRF7313Q is a high-speed, high-voltage, and low-power MOSFET transistor array. This four-channel switching device offers superior performance and superior protection features, including thermal shutdown and current limit protection. The AUIRF7313Q is a four-channel P-channel field-effect transistor (FET) array consisting of two P-channel enhancement-mode FETs, an ESD protection diode and two gated FETs. The AUIRF7313Q is designed for high-speed and high-voltage applications, including switching and power conversion.Application Field
The AUIRF7313Q can be used in a wide variety of applications requiring high-speed and low-power switching, such as switching in power distribution systems, and power management for LED lighting and switching power supplies. The AUIRF7313Q can also be used in high-voltage applications, such as motor control and smart grid applications. The AUIRF7313Q is ideal for both low-voltage and high-voltage power management applications. The AUIRF7313Q has a fast switch-on time, making it suitable for high-frequency applications. In addition, the array has built-in ESD protection and current limit protection, making it an ideal choice for high-voltage power management applications. The AUIRF7313Q is also capable of operating at high temperatures up to 150°C.Working Principle
The AUIRF7313Q is a four-channel switching device consisting of two P-channel enhancement-mode FETs, an ESD protection diode, and two gated FETs. The two P-channel FETs are used for high-speed switching, while the two gated FETs are used for protection. The two gated FETs are reverse-biased, which means that the gate voltage is greater than the drain voltage, preventing any unintentionally current from flowing between the gate and the drain. This makes the device highly efficient and reliable.The ESD protection diode provides protection from electrostatic discharge. This diode is reverse biased and therefore prevents any current from flowing between the gate and the drain. The current limit protection circuit limits the maximum drain-to-source current to protect the FETs from over-current conditions. In addition to the above circuit elements, the device also has a GND pin, an input pin, and two output pins. When the input voltage is applied to the gate pin, it causes the two FETs to turn on, allowing current to flow from the drain pin to the source pin. The output pins provide the switched voltage.Conclusion
The AUIRF7313Q is an optimal switching solution for high-speed and high-voltage applications, offering superior performance and protection features including thermal shutdown, current limit protection, and ESD protection. The four-channel switching device is ideal for low-voltage and high-voltage power management applications, including switching in power distribution systems, and power management for LED lighting and switching power supplies.

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