AUIRFN8459TR Allicdata Electronics
Allicdata Part #:

AUIRFN8459TR-ND

Manufacturer Part#:

AUIRFN8459TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 40V 50A 8PQFN
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 50A 50W Surfac...
DataSheet: AUIRFN8459TR datasheetAUIRFN8459TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)
Description

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AUIRFN8459TR Application Field and Working Principle

Transistors are essential components in modern electronics, used in a wide range of products from personal computers to household appliances. Consequently, it is important to understand the working principles and application fields of different types of transistors, such as the AUIRFN8459TR. This particular FET-based transistor is used to control circuitry in some of the most advanced products currently available on the market.

What Is an AUIRFN8459TR?

The AUIRFN8459TR is a high-performance array transistor of the FET (Field-Effect Transistor) family, manufactured by AUI Electronics International. This particular device is built on the N-channel MOS (Metal-Oxide-Semiconductor) field-effect technology, achieving reasonable conductivity at low voltage levels. It is commonly used in amplifiers and audio applications such as power amplifiers, preamplifiers and stages of various effects.

Working Principle of the AUIRFN8459TR

The working principle of a FET transistor is based on the effects of electric fields acting on regions of the device. The AUIRFN8459TR has 4 critical regions, namely the source, drain, gate and body (also called substrate) regions. The gate region is separated from the source and drain regions by a thin insulating layer of SiO2, which is why FET transistors are sometimes referred to as “insulated gate transistors.”

In order to understand the working principle of the AUIRFN8459TR, it is important to understand what happens when an electrical signal is applied to its gate. In this case, the applied electrical field will cause electrons to move from their original positions and migrate towards the gate region. This will cause a change in the electron concentration across the channel, from the source to the drain. The magnitude of the electric field, and therefore the electron concentration, will depend on the size of the applied voltage.

This change in the electron density produces an electric current from the source to the drain, which can be used to control the output voltage in the device. This is why FET transistors are often used in amplifiers and other output devices, since they can be used to control the output voltage and current, allowing for precise control of the output signal.

Applications of the AUIRFN8459TR

The AUIRFN8459TR is a high-performance array transistor that can be used in a wide range of applications. The low voltage needs and high current capacity of the device make it suitable for many audio-related projects such as power amplifiers, preamplifiers, stages of various effects and other audio applications.

Due to its high-performance capabilities, the AUIRFN8459TR is very popular in mobile applications, including smartphones and other handheld devices. It is also commonly used in the automotive industry for controlling circuits in car audio systems, engine control systems and other automotive applications.

In addition, the AUIRFN8459TR is also used in computers, televisions and other household electronics. This particular device is ideal for these types of applications due to its low voltage needs and high power capacity.

Conclusion

The AUIRFN8459TR is a high-performance array transistor of the FET family, manufactured by AUI Electronics International. This device is commonly used in audio-related applications such as power amplifiers, preamplifiers and stages of various effects. In addition, it is also popular in mobile applications, the automotive industry and other household electronics. Its low voltage needs and high current capacity make it very suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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