AUIRS20161S Allicdata Electronics
Allicdata Part #:

AUIRS20161S-ND

Manufacturer Part#:

AUIRS20161S

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Infineon Technologies
Short Description: IC DRVR IGBT/MOSFET 8SOIC
More Detail: High-Side Gate Driver IC Inverting 8-SOIC
DataSheet: AUIRS20161S datasheetAUIRS20161S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): 500mA, 500mA
Base Part Number: AUIRS20161S
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 200ns, 200ns
High Side Voltage - Max (Bootstrap): 150V
Input Type: Inverting
Series: Automotive, AEC-Q100
Logic Voltage - VIL, VIH: --
Voltage - Supply: 4.4 V ~ 6.5 V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Channel Type: Single
Driven Configuration: High-Side
Part Status: Obsolete
Packaging: Tube 
Description

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PMIC - Gate Drivers are devices capable of controlling the power supply of a power switch across a wide range of applications. The AUIRS20161S is a line of gate drivers from Texas Instruments that offer a complete driver solution for high power industrial applications. It features low conventional voltage drop, low gate charge, and low supply current resulting in minimal power dissipation. It also provides excellent thermal performance and noise immunity.

The AUIRS20161S is designed specifically for controlling IGBTs and MOSFETs in high power industrial applications that require the delivery of up to 1200-Volt gate drive. It supports drive currents of up to 400 mA at 5.5V and up to 500 mA at 12V. It provides an adjustable gate threshold voltage range from 0.3 to 6V. The AUIRS20161S is also designed to minimize power dissipation and reduce electromagnetic interference (EMI) with careful layout strategies and selection of components.

The AUIRS20161S includes a robust protection structure for over-temperature, under-voltage lockout, and over-current conditions. These features allow improved system reliability and performance. It is also equipped with a built-in filtering circuit to reduce EMI by preventing high frequency noise from the switching element. The AUIRS20161S offers a frequency range between 2 kHz and 200 kHz, allowing efficient current control in various applications.

The AUIRS20161S is a good choice for driving power MOSFETs and IGBTs in high power industrial applications. It features a low gate charge, low voltage drop, low supply current, and excellent thermal performance. It offers over-temperature, under-voltage lockout, and over-current protection for improved system reliability and performance. Additionally, the AUIRS20161S includes a built-in filtering circuit to reduce EMI and supports a wide frequency range. All these features make the AUIRS20161S an excellent choice for any application that requires a robust, high power gate driver.

The specific data is subject to PDF, and the above content is for reference

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