Allicdata Part #: | AUIRS20161S-ND |
Manufacturer Part#: |
AUIRS20161S |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRVR IGBT/MOSFET 8SOIC |
More Detail: | High-Side Gate Driver IC Inverting 8-SOIC |
DataSheet: | AUIRS20161S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Peak Output (Source, Sink): | 500mA, 500mA |
Base Part Number: | AUIRS20161S |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 200ns, 200ns |
High Side Voltage - Max (Bootstrap): | 150V |
Input Type: | Inverting |
Series: | Automotive, AEC-Q100 |
Logic Voltage - VIL, VIH: | -- |
Voltage - Supply: | 4.4 V ~ 6.5 V |
Gate Type: | IGBT, N-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | High-Side |
Part Status: | Obsolete |
Packaging: | Tube |
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PMIC - Gate Drivers are devices capable of controlling the power supply of a power switch across a wide range of applications. The AUIRS20161S is a line of gate drivers from Texas Instruments that offer a complete driver solution for high power industrial applications. It features low conventional voltage drop, low gate charge, and low supply current resulting in minimal power dissipation. It also provides excellent thermal performance and noise immunity.
The AUIRS20161S is designed specifically for controlling IGBTs and MOSFETs in high power industrial applications that require the delivery of up to 1200-Volt gate drive. It supports drive currents of up to 400 mA at 5.5V and up to 500 mA at 12V. It provides an adjustable gate threshold voltage range from 0.3 to 6V. The AUIRS20161S is also designed to minimize power dissipation and reduce electromagnetic interference (EMI) with careful layout strategies and selection of components.
The AUIRS20161S includes a robust protection structure for over-temperature, under-voltage lockout, and over-current conditions. These features allow improved system reliability and performance. It is also equipped with a built-in filtering circuit to reduce EMI by preventing high frequency noise from the switching element. The AUIRS20161S offers a frequency range between 2 kHz and 200 kHz, allowing efficient current control in various applications.
The AUIRS20161S is a good choice for driving power MOSFETs and IGBTs in high power industrial applications. It features a low gate charge, low voltage drop, low supply current, and excellent thermal performance. It offers over-temperature, under-voltage lockout, and over-current protection for improved system reliability and performance. Additionally, the AUIRS20161S includes a built-in filtering circuit to reduce EMI and supports a wide frequency range. All these features make the AUIRS20161S an excellent choice for any application that requires a robust, high power gate driver.
The specific data is subject to PDF, and the above content is for reference
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