Allicdata Part #: | AUIRS4426S-ND |
Manufacturer Part#: |
AUIRS4426S |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Infineon Technologies |
Short Description: | IC DRIVER LOW SIDE DUAL 8SOIC |
More Detail: | Low-Side Gate Driver IC Inverting 8-SOIC |
DataSheet: | AUIRS4426S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Logic Voltage - VIL, VIH: | 0.8V, 2.7V |
Base Part Number: | AUIRS4426S |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 15ns, 25ns |
Input Type: | Inverting |
Current - Peak Output (Source, Sink): | 2.3A, 3.3A |
Series: | Automotive, AEC-Q100 |
Voltage - Supply: | 6 V ~ 20 V |
Gate Type: | IGBT, N-Channel, P-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Low-Side |
Part Status: | Obsolete |
Packaging: | Tube |
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.PMIC - Gate Drivers is a type of integrated circuit that works together with the primary control of the power management. The AURS4426S is a programmable dynamic gate driver with a pre-programmed delay circuit, connected between the controller and a power transistor. It is specifically designed for intelligent driving of N-channel MOSFETs, as well as controlling and managing the current flow in two-phase switches and synchronous rectification applications.
The AURS4426S gate driver requires a single external component diode, which is in the form of a Schottky diode with low reverse leakage current. This diode will allow the device to be used in wide range of operating temperature and duty cycles, depending on the application. Furthermore, the AURS4426S device can be applied in a variety of applications with the help of its adjustable voltage clamping features.
The impact of this device on the overall system performance can be highly beneficial. It increases the efficiency of the system by minimizing the turnaround time required for switching between high and low voltage. This assists in managing the load current which reduces energy loss and increases overall efficiency. In addition, the AURS4426S gate driver can reduce the number of heat transfer components in the system, something that could reduce the size as well as cost of the power management system.
The AURS4426S gate driver operates by utilizing two high-side NMOS and two low-side NMOS devices. The first NMOS switches the source and gate voltage of the power transistor, while the second NMOS provides the negative ground power. The low-side NMOS is connected to the negative ground and is turned on when the gate voltage is less than the source voltage. The high-side NMOS is connected to the positive gate voltage and is turned on when the gate voltage is greater than the source voltage. In addition to the NMOS devices, the AURS4426S gate driver also uses a pre-programmed delay circuit to ensure a consistent switching between high and low voltage.
Once the gate driver is connected to the power transistor, the high-side and low-side NMOS devices can be turned on and off in order to control current flow. The delay circuit is programmable and can be adjusted to ensure that the switching between high and low voltage is consistent. It can also be used to reduce the number of current transients, which can reduce the power wasted in the system. Furthermore, the delay circuit also helps reduce current spikes and noise which can prevent system failure. The AURS4426S gate driver can also be used to control the timing of the current flow, which can help in increasing system efficiency.
In conclusion, the AURS4426S is a programmable dynamic gate driver that can be used for controlling and managing the current flow in two-phase switch and synchronous rectification applications. It is specifically designed to reduce current transients and prevent system failure. The AURS4426S gate driver can also be used to control the timing of the current flow, which can help increase system efficiency. It is a cost-effective solution for a wide range of applications, including intelligent driving of N-channel MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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