BLC8G09XS-400AVTZ

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	791MHz ~ 960MHz
Gain:	17dB
Voltage - Test:	32V
Current Rating:	2.8µA
Noise Figure:	--
Current - Test:	880mA
Power - Output:	540W
Voltage - Rated:	65V
Package / Case:	SOT-1258-7
Supplier Device Package:	SOT-1258-7

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IntroductionThe BLC8G09XS-400AVTZ is a high voltage insulated gate bipolar transistor (IGBT). It is designed for use in high power RF applications. This device is capable of providing up to 400V in voltage blocking capabilities while providing efficient power conversion. It has high switching speeds and low EMI. This device can be used in a variety of applications including automotive, switching power supplies and DC-DC converters. Application FieldThe BLC8G09XS-400AVTZ is most commonly used in high power RF applications such as broadcast television, satellite and cable television, telecom and datacom, broadcast radio and wireless systems. It is also well suited for a variety of applications in the automotive, industrial and consumer sectors. In automotive applications, this device is used for powertrain control and power conditioning for charging/discharging batteries. It is also used for electric vehicle power converters, inverters and motor control. In inverter applications this device can be used for AC-AC, AC-DC and DC-DC conversion. This device is also well suited for On-Board Charging Devices (OBCs). In industrial applications, the BLC8G09XS-400AVTZ is used for Uninterruptible Power Supplies (UPSs), motor drives and photovoltaic inverters. It is also used as a switching element in high power industrial power supplies. In consumer applications, it is used for computer power supplies, LED lighting and other AC/DC and DC/DC conversion applications. Working PrincipleThe BLC8G09XS-400AVTZ is a three terminal device consisting of a thyristor, a diode and a field effect transistor (FET). When a gate voltage is applied, the device will turn on. When the gate voltage is removed, the device will turn off and the diode will become reverse biased. The gate voltage is sourced from a low voltage control circuit which then switches the transistor into conduction. This will in turn cause the device to become forward biased, allowing current to flow between the source and the drain of the device. The device will remain in conduction until the gate voltage is removed and the device is no longer forward biased. The main advantage of this device is its low switching losses. This is due to the low gate current requirement, as well as its low capacitance and low on-conductance. This device has higher power efficiency due to its fast switching time, a key factor in many high power applications. The device also features EMI reduction through its low switching losses, making it suitable for high frequency applications. ConclusionThe BLC8G09XS-400AVTZ is a high voltage insulated gate bipolar transistor designed for use in high power RF applications. It is used in a variety of automotive, industrial and consumer applications for power conversion, motor control and On-Board Charging Devices (OBCs). The device has low switching losses and a fast switching time, making it suitable for high frequency applications and providing improved power efficiency. It has a low gate current requirement as well as low capacitance and low on-conductance, resulting in improved EMI reduction.

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