BLC8G27LS-140AVZ

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.5GHz ~ 2.69GHz
Gain:	14.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	320mA
Power - Output:	28W
Voltage - Rated:	65V
Package / Case:	SOT1275-1
Supplier Device Package:	DFM6

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BLC8G27LS-140AVZ Application Field and Working PrincipleThe BLC8G27LS-140AVZ is a Low Noise Cascode FET Amplifier for very high-frequency. It is developed based on the application of Transistors - FETs, MOSFETs - RF.The BLC8G27LS-140AVZ is well-suited for ultra-wideband applications such as repeaters and line amps, cable modems and other various products. The amplifier provides low distortion, excellent linearity and strong output power. It has very low noise, high linearity and a wide operating temperature range.The BLC8G27LS-140AVZ operates in the RF (radio frequency) range, typically at 860 – 870 MHz. It has a high power gain up to 27 dB, with a very low noise figure. This FET amplifier also supports Impedance Matching Design, allowing for efficient impedance transformation between the input and output connections.The BLC8G27LS-140AVZ is the ideal choice for noise sensitive sensitive applications such as CATV amplifiers and satellite radios. Its wideband response allows it to achieve good linearity and accurate signal transmission with minimal distortion. The FET amplifier is constructed of two n-type junction gate-field-effect transistors, providing low distortion, high linearity and low noise. The gate-source bias voltage set the threshold voltage and turn-on/turn-off characteristics of the device. The device operates in the enhancement mode, which requires the gate-source voltage applied to be greater than the threshold voltage for the device to be on. This voltage is typically applied to the gate-source, with a current source supplying the gate bias.The current source supplies a controlled amount of current to the gate-source, varying between pulse and low frequencies, allowing the amplifier to operate in the most efficient manner possible. The gate-source bias is typically cascaded at the output stage of the amplifier, where the gain is increased by the current passing through the gate. The amplifier is a two-port active device, with inputs connected to the gate and drain, and an output connected to the source. The BLC8G27LS-140AVZ works in a non-inverting configuration, meaning that an increasing input voltage produces an increasing output voltage. This amplifier is designed to be used with an external RF output matching network, which helps transform the real-time impedance for maximum output power. In conclusion, the BLC8G27LS-140AVZ is a low-noise cascode FET amplifier for Ultra Wideband applications. It is ideal for use in noise sensitive applications such as CATV amplifiers, satellite radios and repeaters. The amplifier provides low distortion and excellent linearity, with a wide operating temperature range and a high power gain. The FET amplifier is designed with two n-type junction gate-field-effect transistors and is typically cascaded with an external RF output matching network.

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