BLC8G20LS-310AVZ Allicdata Electronics
Allicdata Part #:

568-12818-ND

Manufacturer Part#:

BLC8G20LS-310AVZ

Price: $ 60.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17DB SOT12583
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 650mA 1....
DataSheet: BLC8G20LS-310AVZ datasheetBLC8G20LS-310AVZ Datasheet/PDF
Quantity: 60
1 +: $ 54.80370
10 +: $ 51.97500
Stock 60Can Ship Immediately
$ 60.28
Specifications
Series: --
Packaging: Tray 
Part Status: Last Time Buy
Transistor Type: LDMOS (Dual), Common Source
Frequency: 1.93GHz ~ 1.99GHz
Gain: 17dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 650mA
Power - Output: 56W
Voltage - Rated: 65V
Package / Case: SOT-1258-3
Supplier Device Package: DFM6
Description

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The BLC8G20LS-310AVZ is a type of transistors that is part of the “RF” category of field effect transistors or FETs. It belongs to a family of FETs referred to as MISFETs or Metal-Insulator-Semiconductor Field-Effect Transistors. In this context, the “metal” is typically a material such as aluminium or gold, the “insulator” is an oxide, and the “semiconductor” is a material such as silicon. The BLC8G20LS-310AVZ is a silicon-gate, RF-type FET with excellent common-mode performance, capable of operating at high frequencies of up to 10GHz. It also has a higher thermal stability than other RF-type FETs.

The BLC8G20LS-310AVZ is typically used in radio transmitters, receivers and transceivers, which makes it ideal for applications that require high-frequency properties, such as WLAN, Bluetooth and 5G cellular radios. This FET can also be used in microwave ovens, satellite communications and other high-frequency electronic devices that require small-sized components. Additionally, due to its thermal stability, it can also be used in automotive, medical and industrial applications.

The BLC8G20LS-310AVZ works in a similar way as other FETs, where an input signal is applied to its gate, allowing the current to flow from its source to its drain. This process is enabled by applying a voltage to the gate which attracts the electron-rich area called the “channel”, created between the source and drain. Here, the electrons in the channel can be controlled by the voltage applied to the gate. Thus allowing the current flow to be controlled by adjusting the gate voltage.

The excellent common-mode performance of the BLC8G20LS-310AVZ makes it an ideal choice for high frequency applications. The common-mode performance is related to the difference between the gate-to-source and gate-to-drain voltages, which is also known as the “threshold voltage”. It is noted that the common-mode performance can be improved by adjusting the current flowing through the device or channelling it in a particular direction. This is due to the fact that the threshold voltage can be shifted by changing the external circuit conditions.

The BLC8G20LS-310AVZ is an RF-type FET that has excellent high-frequency properties, thermal stability and low power consumption. It is used in a variety of high frequency and automotive applications due to its ability to provide a range of control over current. Additionally, it also has excellent common-mode performance due to its ability to shift the threshold voltage by adjusting the external circuit conditions.

The specific data is subject to PDF, and the above content is for reference

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