| Allicdata Part #: | 1603-1056-ND |
| Manufacturer Part#: |
BLC8G27LS-60AVZ |
| Price: | $ 38.19 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | TRANS RF 60W LDMOS DFM6F |
| More Detail: | RF Mosfet DFM6 |
| DataSheet: |  BLC8G27LS-60AVZ Datasheet/PDF |
| Quantity: | 53 |
| 1 +: | $ 34.71930 |
| 10 +: | $ 32.61570 |
| 100 +: | $ 29.24880 |
Specifications
| Series: | * |
| Packaging: | Tray |
| Part Status: | Active |
| Package / Case: | SOT1275-3 |
| Supplier Device Package: | DFM6 |
Description
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BLC8G27LS-60AVZ Application Field and Working Principle
The BLC8G27LS-60AVZ is a type of discrete semiconductor integrated circuit made up of four field-effect transistors (FETs) in a single package. This device is primarily used in high-frequency, high-power radio frequency applications. FETs are transistors that work by controlling the movement of electrons through a semiconductor material. The BLC8G27LS-60AVZ is capable of handling up to 12A of input power and is suitable for use in a variety of high-power radio frequency applications.The BLC8G27LS-60AVZ has four FETs in a single package, each of which controls the current flowing through the device. The four FETs are connected in parallel for increased current handling capability. This allows the BLC8G27LS-60AVZ to handle up to 12A of input power, making it ideal for use in high-power radio frequency applications.The BLC8G27LS-60AVZ has a wide range of characteristics, including good breakdown voltage and excellent thermal stability. It also has a low gate threshold voltage, making it suitable for use in high-frequency circuits. This makes the BLC8G27LS-60AVZ an ideal choice for use in communications, industrial, and automotive applications that require high-frequency performance.The working principle of the BLC8G27LS-60AVZ is relatively simple. The FETs are connected in parallel, which allows them to share the gate voltage, resulting in increased current handling capacity. As the gate voltage is increased, the FETs reduce the impedance of the device, allowing more current to flow through the device. This allows the BLC8G27LS-60AVZ to be used as a switch in high-power RF applications.The BLC8G27LS-60AVZ is an ideal choice for use in high-power radio frequency applications due to its excellent thermal stability, low gate threshold voltage, and wide range of characteristics. The device is capable of handling up to 12A of input power and has four FETs in a single package, making it suitable for use in a variety of applications. The working principle of the BLC8G27LS-60AVZ is relatively simple and is based on the principle of increasing the current handling capacity of the device by connecting the FETs in parallel and allowing them to share the gate voltage.
The specific data is subject to PDF, and the above content is for reference
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|---|
| BLC8G27LS-240AVU | Ampleon USA ... | 56.9 $ | 60 | RF FET LDMOS 65V 14DB SOT... |
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| BLC8G27LS-245AVZ | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
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| BLC8G20LS-400AVY | Ampleon USA ... | 57.55 $ | 100 | RF FET LDMOS 65V 15.5DB S... |
| BLC8G27LS-245AVJ | NXP USA Inc | 0.0 $ | 1000 | TRANS RF 240W 65V LDMOS S... |
| BLC8G24LS-241AVY | Ampleon USA ... | 45.67 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-180AVZ | Ampleon USA ... | 56.9 $ | 60 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G24LS-240AVZ | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-100AVZ | Ampleon USA ... | 52.44 $ | 75 | RF FET LDMOS 65V 15.5DB S... |
| BLC8G20LS-400AVZ | Ampleon USA ... | 61.87 $ | 1000 | RF FET LDMOS 65V 15.5DB S... |
| BLC8G27LS-240AVJ | Ampleon USA ... | -- | 1000 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G27LS-60AVY | Ampleon USA ... | 32.17 $ | 1000 | TRANS RF 60W LDMOS DFM6FR... |
| BLC8G09XS-400AVTZ | Ampleon USA ... | 60.28 $ | 117 | RF MOSFET LDMOS 32V SOT12... |
| BLC8G24LS-241AVZ | Ampleon USA ... | 53.33 $ | 35 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-160AVHY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 28V 14.5DB S... |
| BLC8G27LS-60AVZ | Ampleon USA ... | 38.19 $ | 53 | TRANS RF 60W LDMOS DFM6FR... |
| BLC8G22LS-450AVY | Ampleon USA ... | 109.49 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G27LS-160AVJ | Ampleon USA ... | 49.34 $ | 1000 | RF FET LDMOS 65V 14.3DB S... |
| BLC8G21LS-160AVY | Ampleon USA ... | 42.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
| BLC8G27LS-140AVY | Ampleon USA ... | 45.67 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-160AVU | Ampleon USA ... | 53.05 $ | 1000 | RF FET LDMOS 65V 14.3DB S... |
| BLC8G24LS-240AVU | NXP USA Inc | 0.0 $ | 1000 | TRANS RF 240W 65V LDMOS S... |
| BLC8G27LS-210PVY | Ampleon USA ... | 59.12 $ | 100 | RF FET LDMOS 65V 17DB SOT... |
| BLC8G27LS-140AVZ | Ampleon USA ... | 53.33 $ | 23 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G20LS-310AVY | Ampleon USA ... | 51.72 $ | 100 | RF FET LDMOS 65V 17DB SOT... |
| BLC8G22LS-450AVZ | Ampleon USA ... | 112.88 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G24LS-240AVY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G24LS-240AVJ | NXP USA Inc | 0.0 $ | 1000 | TRANS RF 240W 65V LDMOS S... |
| BLC8G27LS-100AVY | Ampleon USA ... | 44.9 $ | 1000 | RF FET LDMOS 65V 15.5DB S... |
| BLC8G21LS-160AVZ | Ampleon USA ... | 49.78 $ | 60 | RF FET LDMOS 65V 15DB SOT... |
| BLC8G20LS-310AVZ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 17DB SOT... |
| BLC8G27LS-245AVY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G09XS-400AVTY | Ampleon USA ... | 51.72 $ | 1000 | RF MOSFET LDMOS 32V SOT12... |
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