BLC8G27LS-160AVU

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BLC8G27LS-160AVU are low-noise logic GaN Field-Effect Transistors (FETs) with low parasitic capacitance and high frequency gain to drive high-power amplifiers with uniform efficiency from 10 MHz to 27 GHz. These unique devices provide superior temperature stability with a wide range of temperature operating from -40C to +125C. The BLC8G27LS-160AVU is ideal for general purpose amplifier, relay driver and repeater applications. It offers low on-resistance and high power density with low thermal resistance package. It also provides good frequency response, high speed switching and good phase linearity. It can be used in a wide range of applications in various industries, such as microwave, radio frequency (RF), space industry, automotive, and many more.

The BLC8G27LS-160AVU is a GaN (Gallium Nitride) HEMT (high electron mobility transistor) FET. It works on the principle of field-effect, which is a phenomenon in which an electric field applied to a semiconductor material can modulate its characteristics. In the case of a FET, this electric field modulates the current flow in the FET by changing the resistance between the drain and the source. This is done by modulating the width of the conducting channel between the source and the drain and the“carrier concentration”in the semiconductor material. The BLC8G27LS-160AVU has a low-noise gain of 24.4dB and a noise figure of 1.5dB.

The BLC8G27LS-160AVU has an output Power added efficiecy (PAE) of 60%, making it an ideal amplifier and repeater device. It has a high saturation voltage of 8.5V and can support a total output power of 0.8W. The device is also highly efficient as it can support a current of 2A at a power supply voltage of 20V. The device has a maximum operating temperature of +125°C.

Furthermore, the BLC8G27LS-160AVU has a small package size for maximum performance. The package offers a low thermal resistance junction-to-case and a low-profile of only 2mm. This makes it ideal for high power, high frequency, and high frequency switching applications.

In conclusion, the BLC8G27LS-160AVU is an excellent choice for all your high-power needs. It combines low noise, high power density, excellent frequency range, high efficiency, low resistance, and small package in a state of the art GaN HEMT FET. The device can be used in various industries, such as RF, wireless communications, automotive, and space applications.

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