BLC8G27LS-245AVZ

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.5GHz ~ 2.69GHz
Gain:	14.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	500mA
Power - Output:	56W
Voltage - Rated:	65V
Package / Case:	SOT-1251-2
Supplier Device Package:	SOT-1251-2

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Introduction

The BLC8G27LS-245AVZ is a radio frequency (RF) Field Effect Transistor (FET) device employed in high power radio frequency applications. This FET is commonly used in the radio and electronics industries for a variety of purposes, including cellular base stations and RF components for automotive applications. The device comes with a variety of features, including high efficiency, low noise and high reliability.

Applications

The BLC8G27LS-245AVZ is primarily used in a variety of high-power radio frequency applications. This device can be used as: a power amplifier in cellular base stations; a linear amplifier in amateur radio applications; a voltage controlled oscillator in commercial and military radars; and a switch in electronic circuits. In addition, the device can also be employed in electronic devices such as transmitters, receivers and automatic gain control circuits.

Technical Specifications

The BLC8G27LS-245AVZ is a high-voltage N-channel gallium arsenide FET. It has a maximum permitted drain-source voltage of 1000 V and a maximum drain-source current of 75 mA. This device has a power dissipation of 500 mW and an operating temperature range of -55 to +150 degrees Celsius. This RF FET has a breakdown voltage of 2500 V and an insulation resistance of over 10000 M Ohms.

Working Principle

The BLC8G27LS-245AVZ is a Field Effect Transistor (FET). This type of transistor works on the principle of an electric field-induced modulation of its electron charge. In a common-source FET configuration, the FET is used as a voltage-controlled switch. When a voltage is applied across the gate-source terminal of the FET, the electric field created modulates the electron charge in the channel between the drain and source. This causes the channel to narrow and increase the impedance of the FET, leading to a decrease in the current flowing through it. In the common-drain FET configuration, the FET is used in a voltage amplifier. The application of a voltage across the gate-source terminal modulates the electron charge in the channel of the FET and changes its resistance. This affects the current flowing through the channel and thus the amplification of the signal at the output.

Conclusion

The BLC8G27LS-245AVZ is a high-power radio frequency Field Effect Transistor (FET). This device features high-efficiency, low-noise, and high-reliability and is suitable for various applications including cellular base stations and RF components for automotive applications. The FET is employed in two configurations, common-source and common-drain, and works on the principle of an electric field-induced modulation of its electron charge.

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