BLC8G21LS-160AVY Allicdata Electronics
Allicdata Part #:

568-12762-2-ND

Manufacturer Part#:

BLC8G21LS-160AVY

Price: $ 42.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 15DB SOT12751
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 200mA 1....
DataSheet: BLC8G21LS-160AVY datasheetBLC8G21LS-160AVY Datasheet/PDF
Quantity: 1000
100 +: $ 38.75150
Stock 1000Can Ship Immediately
$ 42.62
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 1.88GHz ~ 2.03GHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 200mA
Power - Output: 22.5W
Voltage - Rated: 65V
Package / Case: SOT1275-1
Supplier Device Package: DFM6
Description

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Transistors - FETs, MOSFETs - RF

The BLC8G21LS-160AVY is an integrated circuit built with the technology of metal–oxide–semiconductor field-effect transistor (MOSFET). This is a novel MOSFET designed for high-frequency radio-frequency (RF) applications. The device provides excellent RF performance at high frequencies, offering handling capability up to 160V.

Application

The BLC8G21LS-160AVY provides superior performance and is suitable for use in a wide variety of RF applications. It is suitable for use in RF amplifiers, switches, and attenuators, as well as RF power amplifiers. It is also suitable for use in automotive and satellite applications, as well as any other type of high-frequency application where high power and switching are required.

In addition, the BLC8G21LS-160AVY is perfect for use in applications that require high-repeatability parameters, such as frequency-selective networks, power amplifiers, and precision attenuators. It is also suitable for use in RF receiving and transmitting applications, as well as being suitable for industrial applications such as access control, LANs, and many more.

Working Principle

The BLC8G21LS-160AVY utilizes a MOSFET structure to achieve high-frequency and high-power performance. Its structure is based on a power MOSFET, which uses a field-effect transistor (FET) to control the flow of electric current in the device. The FET is the fundamental building block of the circuit and it is responsible for controlling the flow of electrons by altering the voltage applied to the gate terminal.

The MOSFET structure of the BLC8G21LS-160AVY allows it to be operated at higher frequencies than conventional devices. This makes it ideal for use in applications that require fast signal processing and high-power delivery, such as radio-frequency amplifiers. The device is also capable of operating at the highest possible voltage levels without compromising its high-frequency performance.

The BLC8G21LS-160AVY utilizes an advanced thermal design which helps to maximize its performance. This allows the device to achieve better switching speeds, higher efficiency, and increased power levels. The device can operate at temperatures up to 0°C, ensuring that it can be used in high-performance applications without fear of overheating or degradation.

The BLC8G21LS-160AVY offers a wide range of performative characteristics and is the perfect solution for a variety of RF applications. It offers excellent performance over a wide temperature range and can be operated at a wide range of frequencies. It also provides high-speed switching and improved gain performance while still providing excellent stability. The device is highly reliable and can handle larger voltages with ease, making it an ideal choice for harsh environment applications.

The specific data is subject to PDF, and the above content is for reference

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