BLC8G27LS-160AVJ

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.5GHz ~ 2.69GHz
Gain:	14.3dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	250mA
Power - Output:	31.6W
Voltage - Rated:	65V
Package / Case:	SOT1275-1
Supplier Device Package:	DFM6

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BLC8G27LS-160AVJ is a small signal N–channel Enhancement–Mode, Vertical DMOS FET designed specifically for HF/VHF RF power amplifier applications. It is designed to withstand large voltage transients and is also suitable for general purpose high reliability circuit applications. The device package comes in a standard plastic TO-92 package and is designed to be easy to use and cost effective.

Features and Benefits

The BCL8G27LS-160AVJ offers a number of features and benefits for RF power amplifier applications, including:

• High current capability
• Low gate capacitance
• Low gate threshold voltage
• Low gate-to-drain capacitance
• Low noise
• High frequency operation
• High input impedance

Applications

The BCL8G27LS-160AVJ is suitable for use in a variety of applications, including:

• Digital signal processing (DSP)
• RF signal amplification
• High power amplifiers
• High frequency switching applications
• Voltage controlled oscillators
• Low noise amplifiers
• RF power measurement equipment

Working Principle

The BCL8G27LS-160AVJ is an n–channel Enhancement–Mode Vertical DMOS FET specifically designed for RF power amplifier applications. It is designed to provide a low noise, high frequency and low capacitance signal path. The FET has a threshold voltage of -3V, a low gate capacitance of 0.2 pF and a low gate-to-drain capacitance of 0.03 pF. In addition, it has high input impedance of around 80k ohms and a current rating of 1A. When the gate voltage of the FET is above the threshold voltage, it turns on and the drain current is controlled by the gate voltage. When the gate voltage is below the threshold voltage, the FET is off and no current flows. As with all MOSFETs, the resistance between the drain and source is high when the FET is off, which helps to reduce the noise and power dissipation of the device. When used for RF power amplifier applications, the BCL8G27LS-160AVJ can provide high efficiency and low noise operation, due to its low capacitance, high input impedance and low threshold voltage. It is suitable for use at frequencies of up to 1 GHz and can provide a cost effective solution for a variety of applications.

Conclusion

The BCL8G27LS-160AVJ is a small signal N–channel Enhancement–Mode Vertical DMOS FET designed specifically for HF/VHF RF power amplifier applications. It is designed to withstand large voltage transients and is also suitable for general purpose high reliability circuit applications. The device is suitable for a variety of applications, including DSP, RF signal amplification, high power amplifiers, high frequency switching applications, voltage controlled oscillators, low noise amplifiers and RF power measurement equipment. The device offers a number of features and benefits, including high current capability, low gate capacitance, low gate threshold voltage, low gate-to-drain capacitance, low noise, high frequency operation and high input impedance.

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