| Allicdata Part #: | BLC8G24LS-240AVZ-ND |
| Manufacturer Part#: |
BLC8G24LS-240AVZ |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF FET LDMOS 65V 14.5DB SOT12521 |
| More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 500mA 2.... |
| DataSheet: |  BLC8G24LS-240AVZ Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS (Dual), Common Source |
| Frequency: | 2.3GHz ~ 2.4GHz |
| Gain: | 14.5dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 500mA |
| Power - Output: | 56W |
| Voltage - Rated: | 65V |
| Package / Case: | SOT-1252-1 |
| Supplier Device Package: | DFM8 |
Description
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BLC8G24LS-240AVZ, most commonly referred to as BLC8G, is an advanced radio frequency field-effect transistor (RF-FET). As its name implies, RF-FET is an FET that operates in the radio frequency domain. It is a four-pin device, mainly used in applications that require precise modulation and amplification of high-frequency signals. It is commonly used in phase shift keying (PSK) modulators, frequency synthesizers and various other RF instruments.The major application field for BLC8G is in radio frequency (RF) communication devices, such as cellular phones, two-way radios, telecommunications systems, satellite systems and other devices that require low-noise amplification and/or modulation of high-frequency signals. It is used extensively in digital modulation and data transmission systems, where it has the capability to provide reliable digital operations at speeds up to and beyond 4 GHz.The working principle of BLC8G is based on the development of an electric field, which is applied to a gate electrode. This gate electrode controls the operation of the transistor and determines what states it will enter. The gate is essentially a capacitor, whose electric field affects the current running through the device. When the gate receives a voltage input, the current through the device increases, which allows for a reduction in the ohmic resistance of the transistor. This allows for better signal amplification and modulation. The gate also has a threshold voltage, which needs to be exceeded for the transistor to enter its active state. This threshold voltage is determined by the amount of voltage on the gate, and is typically within the range of 4V to 6V. Additionally, the device can also be operated in either a linear, or a saturation mode, which allows for further signal amplification and modulation. In addition to the advantages gained from using BLC8G in RF communication applications, it also provides an efficient heat dissipation solutions with its low on-resistance and low parasitic capacitance. This makes it ideal for applications where thermal stability is an issue. It is also designed with an internal reverse mount protection, which provides additional peace of mind for the user. Overall, BLC8G24LS-240AVZ is an efficient, reliable, and cost-effective radio frequency field-effect transistor, making it an ideal choice for a variety of RF communication applications. Its low on-resistance, low parasitic capacitance and internal reverse mount protection makes it suitable for a variety of projects, while its precise modulation and amplification capabilities makes it an invaluable component in digital modulation and data transmission systems.
The specific data is subject to PDF, and the above content is for reference
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| BLC8G20LS-400AVY | Ampleon USA ... | 57.55 $ | 100 | RF FET LDMOS 65V 15.5DB S... |
| BLC8G20LS-310AVZ | Ampleon USA ... | 60.28 $ | 60 | RF FET LDMOS 65V 17DB SOT... |
| BLC8G22LS-450AVY | Ampleon USA ... | 109.49 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G27LS-100AVZ | Ampleon USA ... | 52.44 $ | 75 | RF FET LDMOS 65V 15.5DB S... |
| BLC8G27LS-140AVZ | Ampleon USA ... | 53.33 $ | 23 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-60AVZ | Ampleon USA ... | 38.19 $ | 53 | TRANS RF 60W LDMOS DFM6FR... |
| BLC8G21LS-160AVZ | Ampleon USA ... | 49.78 $ | 60 | RF FET LDMOS 65V 15DB SOT... |
| BLC8G24LS-241AVZ | Ampleon USA ... | 53.33 $ | 35 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-240AVU | Ampleon USA ... | 56.9 $ | 60 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G27LS-180AVZ | Ampleon USA ... | 56.9 $ | 60 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G21LS-160AVY | Ampleon USA ... | 42.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
| BLC8G27LS-100AVY | Ampleon USA ... | 44.9 $ | 1000 | RF FET LDMOS 65V 15.5DB S... |
| BLC8G27LS-140AVY | Ampleon USA ... | 45.67 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-180AVY | Ampleon USA ... | 48.72 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G27LS-240AVJ | Ampleon USA ... | -- | 1000 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G27LS-60AVY | Ampleon USA ... | 32.17 $ | 1000 | TRANS RF 60W LDMOS DFM6FR... |
| BLC8G24LS-241AVY | Ampleon USA ... | 45.67 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-160AVJ | Ampleon USA ... | 49.34 $ | 1000 | RF FET LDMOS 65V 14.3DB S... |
| BLC8G09XS-400AVTY | Ampleon USA ... | 51.72 $ | 1000 | RF MOSFET LDMOS 32V SOT12... |
| BLC8G27LS-160AVU | Ampleon USA ... | 53.05 $ | 1000 | RF FET LDMOS 65V 14.3DB S... |
| BLC8G20LS-400AVZ | Ampleon USA ... | 61.87 $ | 1000 | RF FET LDMOS 65V 15.5DB S... |
| BLC8G22LS-450AVZ | Ampleon USA ... | 112.88 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
| BLC8G24LS-240AVZ | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-245AVY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G24LS-240AVY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G27LS-160AVHY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 28V 14.5DB S... |
| BLC8G27LS-245AVZ | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
| BLC8G24LS-240AVJ | NXP USA Inc | 0.0 $ | 1000 | TRANS RF 240W 65V LDMOS S... |
| BLC8G24LS-240AVU | NXP USA Inc | 0.0 $ | 1000 | TRANS RF 240W 65V LDMOS S... |
| BLC8G27LS-245AVJ | NXP USA Inc | 0.0 $ | 1000 | TRANS RF 240W 65V LDMOS S... |
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