BLC8G21LS-160AVZ

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	1.88GHz ~ 2.03GHz
Gain:	15dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	200mA
Power - Output:	22.5W
Voltage - Rated:	65V
Package / Case:	SOT1275-1
Supplier Device Package:	DFM6

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The BLC8G21LS-160AVZ is an N-channel enhancement-mode lateral MOSFET that is manufactured by Infineon Technologies. It is designed to have a high performance and low-power product structure. The device has a drain-source breakdown voltage of 160V and a maximum drain-source on-state resistance of 6.5 ohms. It is commonly used in RF applications, such as amplifiers, modulators, and signal switching.
BLC8G21LS-160AVZ is basically a type of transistor, specifically an insulated gate field-effect transistor (IGFET). It is a three-terminal device that is composed of two other transistors – the P-channel and the N-channel MOSFETs. The source and drain of the BLC8G21LS-160AVZ are of the same sign, which is the N-channel type. It has a gate voltage (Vgs) and a drain current (Id) which are used to control the current flow in the device. The main differences between the P-channel and the N-channel MOSFETs are the directionality of the current and the number of electrons in the conduction region.
The principle of operation for the device is based on the use of a field-effect mechanism, where the electrons and holes in the source and drain regions form a depletion layer in the substrate. The changes in the electric potential at the gate of the device cause the depletion layer to increase or decrease in size, thus allowing or inhibiting the flow of current. As such, the BLC8G21LS-160AVZ can be used to switch on or off the electric current to a load. The switch can be used both in DC and AC applications.
The BLC8G21LS-160AVZ is widely used in RF applications due to its high frequency characteristics, such as high gain, high isolation, and low noise. It is used in amplifiers, modulators, and RF switches. Its high-frequency characteristics make it suitable for use in base station applications, as well as in high-power amplifiers. It is also used in the development of other products, such as smartphone antennas, where it is used to improve the transmit and receive performance of the antenna.
In conclusion, the BLC8G21LS-160AVZ is a commonly used N-channel enhancement-mode lateral MOSFET. It is used in RF applications, such as amplifiers, modulators, and signal switching. It is mainly used in the development of smartphone antennas, where it is used to improve the RF performance of the antenna. The device operates on the principle of field-effect mechanism, where the electric potential of the gate can be used to switch on or off the flow of electric current to a load.

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