BLC8G22LS-450AVY

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.11GHz ~ 2.17GHz
Gain:	14dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	1A
Power - Output:	85W
Voltage - Rated:	65V
Package / Case:	SOT-1258-3
Supplier Device Package:	DFM6

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Introduction

BLC8G22LS-450AVY is a type of a radio frequency field effect transistor (RF FET). It is part of a class of transistor semiconductor devices that are extensively used in radio, TV, microwave and other communication systems for the purpose of modulating, amplifying and switching electrical signals. This paper will discuss the application fields and working principles of BLC8G22LS-450AVY.

Application Fields

BLC8G22LS-450AVY has many different application fields due to its wide range of features. These include high power and low noise gain, which make it extremely suitable for use as an amplifier in radio and television systems. Due to its low power and high efficiency, BLC8G22LS-450AVY is also used in digital and analog circuits as a switch, amplifier and other digital signal processing functions. Furthermore, it is useful in RF and microwave applications, whereby it acts as a resistor and coupling element. Hence, BLC8G22LS-450AVY can be used in anything from radio amplifiers, TV receivers, communications systems, satellite and radar applications to automotive, medical and consumer electronic systems.

Working Principles

The key difference between FETs and bipolar transistors is the means by which current is regulated. While the latter relies on the characteristics of the collector-emitter junction, a FET utilizes the properties of the field effect to control the flow of current across its terminals. FETs are current-controlled, meaning that changing the voltage of the gate (this is the ‘field effect’) controls the current between the source and the drain. This differs substantially from bipolar transistors, which are voltage-controlled. BLC8G22LS-450AVY is a type of a metal-oxide-semiconductor FET (MOSFET). This type of transistor has a higher input impedance, low output capacitance and better noise figure than FETs that utilize other alternatives for the gate insulation (e.g. silicon dioxide). Generally speaking, MOSFETs have a better current and voltage handling capacity as compared to other types of FETs.

Conclusion

In conclusion, BLC8G22LS-450AVY is an RF FET that is used for the purpose of modulating, amplifying and switching electrical signals. It is extensively used in many different fields, including in radio, TV, microwave and other communication systems, as well as in digital and analog circuits, and in RF and microwave applications. Its primary advantage over bipolar transistors lies in the fact that it is a current-controlled transistor and has higher input impedance, low output capacitance and better noise figure than other types of FETs.

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