Allicdata Part #: | BLC8G27LS-60AVY-ND |
Manufacturer Part#: |
BLC8G27LS-60AVY |
Price: | $ 32.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | TRANS RF 60W LDMOS DFM6F |
More Detail: | RF Mosfet DFM6 |
DataSheet: | BLC8G27LS-60AVY Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 29.24880 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Package / Case: | SOT1275-3 |
Supplier Device Package: | DFM6 |
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BLC8G27LS-60AVY Application Field and Working Principle
The BLC8G27LS-60AVY is a silicon N-Channel enhancement mode field-effect transistor (FET) optimized for radio frequency (RF) applications. It is designed to operate as part of a low noise amplifier in radio receivers operating on a wide frequency range up to 6 GHz, as well as in a high power output stage in line drivers, RF power amplifiers, and voltage controlled oscillators.
The device is manufactured using a double balanced process to assure the highest possible linearity over a wide dynamic range. The internal bias networks of the transistor have been optimized to provide best performance and low current consumption which makes it suitable for battery operated devices. The device also features a high input impedence and low output impedence, making it suitable for wide range of system architectures.
Working Principle
The BLC8G27LS-60AVY is a field effect transistor (FET) which operates on the principle of voltage bias. When a voltage is applied to the gate terminal, it creates an electric field that controls the current flow between the source and drain terminals. The gate is thus used to regulate current between these terminals in order to generate a controlled output from the device.
The device has an input impedance of 77.4 ohms and an output impedance of 93.1 ohms. This allows it to serve as a powerful, low noise amplifier when used in a radio receiver circuit. A simple amplifier circuit designed around this device can boost incoming signals with minimal noise and distortion.
The transistor has a maximum static drain current of 60 mA, the maximum junction temperature of the device is 175 °C and its power dissipation rating is 100 mW.
Applications
The BLC8G27LS-60AVY is designed to operate in frequencies up to 6 GHz and can be used in a variety of radio receiver and transmitter applications such as low noise amplifiers, line drivers, RF power amplifiers, and voltage controlled oscillators. The device is also suitable for use in battery operated devices due to its low current consumption.
The device can be used to drive antennas for wireless applications, for example for satellite television receivers, WiFi antennas and other short range wireless links. It can also be used in applications where a compact transmitter or receiver is required, such as for Bluetooth or similar applications.
The BLC8G27LS-60AVY can be used in almost any radio frequency application where low noise and good linearity are required. Its suitability for battery operated device makes it an attractive choice for many new designs.
Conclusion
The BLC8G27LS-60AVY is a powerful device designed to be used in radio frequency applications, particularly in radio receivers. It features a low noise operation, high input impedence and low output impedence, making it suitable for wide range of system architectures. The device is also suitable for use in battery operated systems due to its low current consumption.
Overall, the BLC8G27LS-60AVY is an attractive candidate for a wide range of radio frequency applications.
The specific data is subject to PDF, and the above content is for reference
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BLC8G27LS-240AVU | Ampleon USA ... | 56.9 $ | 60 | RF FET LDMOS 65V 14DB SOT... |
BLC8G27LS-180AVZ | Ampleon USA ... | 56.9 $ | 60 | RF FET LDMOS 65V 14DB SOT... |
BLC8G21LS-160AVY | Ampleon USA ... | 42.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLC8G27LS-100AVY | Ampleon USA ... | 44.9 $ | 1000 | RF FET LDMOS 65V 15.5DB S... |
BLC8G27LS-140AVY | Ampleon USA ... | 45.67 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
BLC8G27LS-180AVY | Ampleon USA ... | 48.72 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLC8G27LS-240AVJ | Ampleon USA ... | -- | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLC8G27LS-60AVY | Ampleon USA ... | 32.17 $ | 1000 | TRANS RF 60W LDMOS DFM6FR... |
BLC8G24LS-241AVY | Ampleon USA ... | 45.67 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
BLC8G27LS-160AVJ | Ampleon USA ... | 49.34 $ | 1000 | RF FET LDMOS 65V 14.3DB S... |
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BLC8G27LS-160AVU | Ampleon USA ... | 53.05 $ | 1000 | RF FET LDMOS 65V 14.3DB S... |
BLC8G20LS-400AVZ | Ampleon USA ... | 61.87 $ | 1000 | RF FET LDMOS 65V 15.5DB S... |
BLC8G22LS-450AVZ | Ampleon USA ... | 112.88 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLC8G24LS-240AVZ | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
BLC8G27LS-245AVY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 14.5DB S... |
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