BLC8G27LS-210PVY Allicdata Electronics
Allicdata Part #:

568-12768-2-ND

Manufacturer Part#:

BLC8G27LS-210PVY

Price: $ 59.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17DB SOT12513
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 1.73A 2....
DataSheet: BLC8G27LS-210PVY datasheetBLC8G27LS-210PVY Datasheet/PDF
Quantity: 100
100 +: $ 53.73790
Stock 100Can Ship Immediately
$ 59.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 2.6GHz ~ 2.7GHz
Gain: 17dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.73A
Power - Output: 65W
Voltage - Rated: 65V
Package / Case: SOT-1251-3
Supplier Device Package: 8-DFM
Description

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The BLC8G27LS-210PVY is a radio frequency (RF) type of transistor. It is a structural and electrical component of a semiconductor device commonly called either Field Effect Transistor (FET) or MOSFET. FETs and MOSFETs are transistors associated with the field effect principle and are used in the construction of various electronic devices. With this component, various forms of electrical energy can be converted into useful electrical signals.

The BLC8G27LS-210PVY provides a current flow controlled by an electric field. It features an N-channel Silicon Gate Lateral MOSFET which works at a high frequency in the range of 2760-2790 MHz. This RF transistor also features a maximum power dissipation of 1.5 Watts and a high linear range of 30 V and a maximum breakdown voltage of 30 V.

This component can be used in a variety of applications including communications, data transmission, radar, communication equipment, sound and video applications and computer systems. Its main purpose is to provide high frequency communications for high data rate systems through the use of an RF signal. It can also be used in RF switching equipment, radios and power amplifiers.

The working principle of BLC8G27LS-210PVY is based on the principle of a field effect transistor (FET), which works through the control of electric field. The FET has two pairs of electrodes, one of which is called the gate and the other is the drain. An electric field is produced when the gate electrode is biased. This electric field passes through the channel and affects the current between the source and the drain electrodes. In the MOSFET, the source electrode is the source of the current and is composed of an insulated gate conducting channel. The applications of the FET are varied, as it can be used to amplify or switch signals and to adjust the gain or frequency of an electrical signal.

In summary, the BLC8G27LS-210PVY is an RF type of transistor which works on the principle of a field effect transistor. It is primarily used for high-frequency communications and data transmission. It can be used in a number of applications such as communication equipment, radios and power amplifiers and provides a high linear range of 30 V and a maximum breakdown voltage of 30 V.

The specific data is subject to PDF, and the above content is for reference

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