BLF6G20-45,135

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A BLF6G20-45,135 is a common radio frequency metal-oxide-semiconductor field-effect transistor (RF MOSFET). It has a drain-source breakdown voltage of 20V and a maximum drain current of 45A. It operates on a 135MHz bandwidth.

MOSFETs are unipolar transistors, which means that they are only capable of conducting current in one direction. This makes them ideal for use in radio frequency applications, as they can be easily switched off and on again by simply changing the polarity of the input signal. Because of this property, MOSFETs are often used in power amplifiers and other high frequency applications.

The BLF6G20-45,135 utilizes a vertical-channel MOSFET design, which means that the channel is created by the layers of insulation between the source and drain contacts. This makes it much easier to control the current flowing between the two contacts, allowing the transistor to produce extremely large current gains with very little effort. Additionally, this design makes it much more resistant to thermal stress and other radio frequency interference.

The BLF6G20-45,135 is commonly used in power amplifiers, low noise amplifiers, linear amplifiers, and other radio frequency power control applications. It’s small size and high power output makes it particularly suitable for these applications, as well as for applications that require high linearity, such as communications systems and transmitters.

The BLF6G20-45,135 operates by controlling the amount of current that flows between the drain and the source contacts. When a voltage is applied to the gate contact, a low-resistance channel is created between the drain and the source, allowing current to flow freely. When the voltage is removed, the channel closes and the current is cut off. This allows the user to precisely control the current flow and the output power of the device.

The BLF6G20-45,135 is a versatile MOSFET, capable of operating at high frequencies and with a wide range of input voltages. It has a high gain, low noise, and low power consumption, making it an excellent choice for a number of radio frequency applications. Additionally, its small size and wide bandwidth make it a suitable choice for applications where space and weight are at a premium.

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