Allicdata Part #: | 568-8643-ND |
Manufacturer Part#: |
BLF6G20LS-110,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 19DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 900mA 1.93GHz ~ 1.99GHz 19dB 2... |
DataSheet: | BLF6G20LS-110,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.93GHz ~ 1.99GHz |
Gain: | 19dB |
Voltage - Test: | 28V |
Current Rating: | 29A |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 25W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF6G20 |
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BLF6G20LS-110 and BLF6G20LS-112 are two Thermally Enhanced N-Channel Gallium Nitride Field Effect Transistors (FETs) developed by NXP. Suitable for high frequency switch applications, both offer a high breakdown voltage, low on-resistance and positive temperature coefficient in the linear region.The design of the Gallium Nitride transistors helps to reduce total power consumption, with the source and drain completely isolated from the gate. Thanks to the use of GaN HEMT technology, its operation is based on the generation of a high electric field or "avalanche switch", triggering its high power-on waveform.This thermally enhanced FET is particularly suitable for transistor radio repeater applications, with a wide operating voltage range of 6.8 - 22V and an operating temperature range of -55 to 150°C. It is also able to switch heavy load applications with peak powers of up to 500W.The BLF6G20LS-112 features a bias resistor between the gate and the source terminal, which helps to provide a regulated, stable base current. The internal structure of the devices also uses cascode configuration to reduce the input capacitance and allow for a faster switching time.BLF6G20LS-110 and BLF6G20LS-112 transistors are suitable for a wide range of high frequency switch applications, such as RF power amplifiers and power oscillators, located in the industrial, automotive, communications and consumer industries.Working Principle
BLF6G20LS-110 and BLF6G20LS-112 transistors are field effect transistors (FETs) that use a thermally enhanced form of GaN HEMT technology. This technology is able to generate a high electric field, or avalanche switch, that enables the high power-on waveform needed for fast switching, high power applications and heavy load applications.
In the case of the BLF6G20LS-112, an internal bias resistor between the gate and the source terminal helps to provide a regulated, stable base current. Additionally, the internal structure of both devices includes a cascode configuration to reduce input capacitance and allow for fast switching time.
Application Field
BLF6G20LS-110 and BLF6G20LS-112 transistors are suitable for various high frequency switch applications, such as RF power amplifiers, power oscillators, and more, located in the industrial, automotive, communications and consumer industries. They are also suitable for transistor radio repeaters and the switching of heavy load applications with peak powers of up to 500W.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF6G15LS-40RN,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
BLF6G13L-250P,112 | Ampleon USA ... | 142.84 $ | 98 | RF FET LDMOS 100V 17DB SO... |
BLF6G27-10G,118 | Ampleon USA ... | 21.89 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G27-10G,112 | Ampleon USA ... | 27.01 $ | 210 | RF FET LDMOS 65V 19DB SOT... |
BLF6G10LS-200RN,11 | Ampleon USA ... | 60.17 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
BLF6G10LS-200RN:11 | Ampleon USA ... | 70.13 $ | 97 | RF FET LDMOS 65V 20DB SOT... |
BLF640U | Ampleon USA ... | 27.01 $ | 233 | RF FET LDMOS 65V 18.5DB S... |
BLF642,112 | Ampleon USA ... | 46.57 $ | 137 | RF FET LDMOS 65V 19DB SOT... |
BLF645,112 | Ampleon USA ... | 102.52 $ | 1442 | RF FET LDMOS 65V 16DB SOT... |
BLF6G13LS-250PGJ | Ampleon USA ... | 134.62 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G38-10G,118 | Ampleon USA ... | 23.7 $ | 100 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
BLF647PS,112 | Ampleon USA ... | 149.83 $ | 19 | RF FET LDMOS 65V 17DB SOT... |
BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38LS-50,112 | Ampleon USA ... | 65.39 $ | 85 | RF FET LDMOS 65V 14DB SOT... |
BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6G27L-50BN,112 | Ampleon USA ... | 53.94 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6H10LS-160,118 | Ampleon USA ... | 57.22 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6H10LS-160,112 | Ampleon USA ... | 62.93 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6G10L-260PBM,11 | Ampleon USA ... | 78.3 $ | 1000 | RF FET LDMOS 65V SOT1110A... |
BLF6G15LS-250PBRN: | Ampleon USA ... | 88.95 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF6G15LS-250PBRN, | Ampleon USA ... | 93.7 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF647PSJ | Ampleon USA ... | 136.11 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G15L-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G15LS-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G27-45,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF6G10-45,135 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 22.5DB S... |
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