BLF6G38S-25,112

Series:	--
Packaging:	Bulk
Part Status:	Last Time Buy
Transistor Type:	LDMOS
Frequency:	3.4GHz ~ 3.6GHz
Gain:	15dB
Voltage - Test:	28V
Current Rating:	8.2A
Noise Figure:	--
Current - Test:	225mA
Power - Output:	4.5W
Voltage - Rated:	65V
Package / Case:	SOT-608B
Supplier Device Package:	CDFM2
Base Part Number:	BLF6G38

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Introduction

BLF6G38S-25,112 is an RF MOSFET Transistor which is widely used in a variety of commercial, industrial and military radio communication equipment. It is designed with industry-leading process technology to achieve high reliability and superior performance. It is suitable for various RF amplifier and high frequency applications, such as Power amplifiers, Frequency converters, High power Mixers and Oscillators.

Performance and properties

The BLF6G38S-25,112 employs a broadband SiP10 process, provides excellent frequency performance over a wide frequency range. It has an enhanced maximum Drain-Source voltage up to 25V and a Drain-Source On current of 79 Amps. It also has a low gate-source threshold voltage of -112V which makes it ideal for low noise applications. The transistor also features various protection circuits to prevent over-current, over-temperature, gate-bias oscillation and RF harmonic. It has a frequency range of 0.5 - 6.5GHz, a maximum Power Gain of 10 dB, and an Operating Temperature range of -55 to +150 degrees Celsius.

Application field

BLF6G38S-25,112 RF MOSFET Transistors are typically used in wireless communications, radar systems, satellite communication systems, test and measurement, broadband amplifiers and many other RF amplifier designs. Its high frequency performance and ultra-low distortion makes it suitable for applications in telemetry, radio broadcast, and radio equipment. It is also used in high power amplifier design for aircraft communication equipment, Digital Video Broadcasting, Wireless Local Area Network (WLAN) equipment, and mobile wireless base station boosters.

Working principle

The BLF6G38S-25,112 transistor is a three-terminal device composed of source, drain and gate terminals. It is based on Metal-Oxide Semiconductor (MOS) technology, which makes it suitable for high frequency operations. It operates by controlling the flow of electrons between the source and drain terminals. The input current is applied to the gate terminal, and the Drain-Source Voltage is controlled by the Gate-Source Voltage. By adjusting the Gate-Source Voltage, the output current can be increased or decreased. Additionally, the higher the Gate-Source Voltage is, the greater the Drain-Source Voltage will be. This means that by changing the Gate-Source Voltage, the frequency response, the Gain, and the bandwidth of the transistor can be changed.

Conclusion

BLF6G38S-25,112 is a powerful RF MOSFET Transistor that is suitable for various applications such as Power amplifiers, Frequency converters and High power Mixers and Oscillators. It features an enhanced Drain-Source voltage of up to 25V and a high current capacity of 79 Amps. It also has an operating temperature range of -55 to +150 degrees Celsius, a frequency range of 0.5 - 6.5GHz, and a maximum power gain of 10dB. With its low gate-source threshold voltage of -112V, it makes it an ideal choice for low noise applications.

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