BLF6G20-230PRN,118 Allicdata Electronics
Allicdata Part #:

BLF6G20-230PRN,118-ND

Manufacturer Part#:

BLF6G20-230PRN,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17DB SOT539A
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 2A 1.8GH...
DataSheet: BLF6G20-230PRN,118 datasheetBLF6G20-230PRN,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 1.8GHz ~ 1.88GHz
Gain: 17.5dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 2A
Power - Output: 65W
Voltage - Rated: 65V
Package / Case: SOT539A
Supplier Device Package: SOT539A
Base Part Number: BLF6G20
Description

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BLF6G20-230PRN,118 Application Field and Working Principle

Device type BLF6G20-230PRN,118 can be classified as a member of Transistors - FETs, MOSFETs - RF. It is a Power transistor made using Gallium Arsenide technology and is delivered in a TO-247-3L SMD package. This Power transistor provides very low noise, very high gain, and is suitable for powering many different devices, such as laptops, TVs, and other consumer electronics.

Features

  • High power of 100 Watts
  • Very low noise figure
  • High gain of up to 23 dB
  • Low harmonic distortion
  • High stability
  • Wide range of operating frequency
  • Excellent linearity
  • Good efficiency

Applications

BLF6G20-230PRN,118 can be used in many applications, including:

  • High-power amplifiers
  • RF switching circuits
  • Power supply circuits
  • Low-noise amplifiers
  • RF transmission circuits
  • DC-DC converters
  • High-speed logic circuits
  • Transmitters
  • Receivers

Working Principle

BLF6G20-230PRN,118 is a Power MOSFET transistor, which operates on the principle of a voltage-controlled resistor. The gate voltage of the transistor determines the electrical resistance of the device, which, in turn, determines the amount of current flowing through the device. The current flow through the transistor is controlled by the voltage applied to the gate voltage of the transistor, so the resistor works like a switch, controlling the current flow through the device.

The device is also characterized by excellent linearity and low harmonic distortion, which can be attributed to the high stability of the device. This means that it is able to accurately produce a signal without the distortion normally associated with semiconductors. This makes it ideal for high-power amplifiers and RF switching circuits.

Conclusion

BLF6G20-230PRN,118 Power MOSFET transistor is a powerful, low-noise, high-gain device that can be used to power many different electronics devices. Its high linearity and low harmonic distortion make it ideal for high-power amplifiers, RF switching circuits, and other applications. It also has a wide range of operating frequencies and is highly efficient.

The specific data is subject to PDF, and the above content is for reference

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