BLF6G27LS-100,112

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Introduction: The BLF6G27LS-100,112 is a near-ultra-wideband (NUWB) gallium nitride high electron mobility transistor (GaN HEMT). This transistor is based on advanced proprietary transistor technology and is specifically designed for use in high-power and wideband applications. It is part of a family of GaN HEMTs that are ideal for use in medical device, military, commercial, and consumer applications.

Application Field: The BLF6G27LS-100,112 is suitable for a wide variety of applications including UHF/VHF/L-band communication, RF/microwave amplifiers and transmitters, satellite communication, and more. It is also suitable for HF and UHF short-range communication and other RF and base stations. Additionally, the transmitters can be used for wireless applications such as WiFi, WiMAX, Zigbee, QoS, beamforming and orthogonal frequency division multiple access (OFDMA).

Working Principle: The BLF6G27LS-100,112 is a high electron mobility transistor (HEMT) which makes use of gallium nitride (GaN) semiconductor technology. The HEMT structures within the transistor are highly optimized to provide high gain, low noise, and broad bandwidth. The wideband nature of the device allows it to have a frequency range of up to 6 GHz. Additionally, the device has a high efficiency and can operate at extended frequency bands, resulting in increased power output. The device uses a source-level interdigitated gate (SLID) architecture which delivers enhanced performance and excellent linearity characteristics.

Features: The BLF6G27LS-100,112 has excellent broadband performance characteristics, making it a desirable transistor device for a range of applications. It has a typical small-signal gain of 25.8 dB, a maximum output power of up to 215 watts, and a drain efficiency of up to 48%. The device also features a low total harmonic distortion (THD) level of -50 dBc, which offers high system performance. Additionally, the device has an input/output return loss of -20 dB, a noise figure of 0.75 dB, and a P1dB of 31.5dBm.

Conclusion: The BLF6G27LS-100,112 is a GaN HEMT device used in a wide variety of applications, which is based on an advanced proprietary transistor technology. It is suitable for high-power applications, providing high gain, low noise, and broad bandwidth. It has excellent broadband performance characteristics such as a maximum output power of 215 watts, a small-signal gain of 25.8 dB, a noise figure of 0.75 dB, and a drain efficiency of up to 48%. It is thus a highly desirable transistor for a range of applications.

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