BLF6G13L-250P,112

Series:	--
Packaging:	Tube
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	1.3GHz
Gain:	17dB
Voltage - Test:	50V
Current Rating:	--
Noise Figure:	--
Current - Test:	100mA
Power - Output:	250W
Voltage - Rated:	100V
Package / Case:	SOT-1121A
Supplier Device Package:	LDMOST
Base Part Number:	BLF6G13

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RF transistors are quite commonplace, found in everything from cell phones and wifi routers to satellite dishes and radar control systems. The BLF6G13L-250P,112 is an example of such a device. This article will look at the application field and working principle of this device. The BLF6G13L-250P,112 is a RF transistor that is suitable for use in a variety of applications, including in power amplifier (PA) circuits, low noise amplifiers (LNA), and digital front-ends. Its small size and low supply current makes it ideal for battery powered applications. It is also highly reliable and can handle high frequency signals well. The BLF6G13L-250P,112 is a junction field effect transistor (JFET), a type of field effect transistor (FET). This device is a MOSFET device, meaning that it employs a metal oxide semiconductor (MOS) structure. In this case the gate of the device is formed by silicon oxide, a thin insulating layer that blocks the conduction of an electric current, except between the gate electrodes. When using the BLF6G13L-250P,112, power is supplied to the drain (D) and source (S) of the device. By varying the voltage applied to the gate (G) it is possible to control the amount of current from the drain to the source. When no voltage is applied to the gate, the device acts as an open circuit. As the voltage is increased, the drain-source current increases. This approach is sometimes referred to as a voltage-controlled current source or source follower. The gate of the device is a very sensitive element as it can easily be damaged by electrostatic discharge. To protect against this, there are built-in protection circuits on the BLF6G13L-250P,112 that limits the current flow through the gate. It is highly recommended to connect a resistor from the gate (G) to the source (S) to ensure a proper electrostatic discharge protection. The BLF6G13L-250P,112 is a very versatile device, able to handle a wide range of frequency signals. The minimum and maximum frequency signals that it can handle are 20MHz-4GHz. Its small size also makes it ideal for applications that require tight form factors, such as RF integrated circuits. The low supply current requirement of 1.5mA makes it suitable for battery-operated electronics. In summary, the BLF6G13L-250P,112 is a MOSFET type RF transistor suitable for a variety of applications such as power amplifiers and low noise amplifiers. Its small size and low current requirements make it ideal for battery operated applications. It is also capable of handling a wide range of frequency signals, up to 4GHz. An external protection circuit should always be connected between the gate and source to provide electrostatic discharge protection.

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