Allicdata Part #: | BLF6H10L-160,112-ND |
Manufacturer Part#: |
BLF6H10L-160,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 104V 20DB SOT467C |
More Detail: | RF Mosfet LDMOS 50V 600mA 952.5MHz ~ 957.5MHz 20dB... |
DataSheet: | BLF6H10L-160,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 952.5MHz ~ 957.5MHz |
Gain: | 20dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 600mA |
Power - Output: | 38W |
Voltage - Rated: | 104V |
Package / Case: | SOT467C |
Supplier Device Package: | SOT467C |
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BFL6H10L-160, 112 are two types of RF MOSFETs (metal-oxide-semiconductor field-effect transistors) that are often used in industrial applications. In this article, we will discuss the application field and working principle of these two transistors.The BFL6H10L-160, 112 transistors, which are usually used in the manufacturing of printed circuit boards and industrial power circuits, have dual-gate logic level and low loss MOSFETs, respectively. Each of them possesses a wide range of useful characteristics that are useful for regulation of microwave signals, amplification of radio and television signals, and other similar tasks.The BFL6H10L-160 has a peaked pinch-off current of over 160 amps and a voltage concentration ratio of over 6, which enables it to handle high voltages. It has excellent thermal stability, high breakdown voltage, and low on-resistance that allow it to work reliably in high-frequency systems. The low noise figure, on the other hand, is advantageous when sensitive modulation is needed.The BFL6H10L-112 has a higher voltage concentration ratio of 8, which allows it to operate at higher frequencies. It also has very low gate leakage current and a good linear performance, making it ideal for radio and TV receivers, military communications systems, and industrial control systems.The BFL6H10L-160 transistors employ the same principle of operation as all other MOSFETs. When a voltage is applied to the gate terminal, it creates a depletion region in the channel underneath that is proportional to the applied voltage. This depletion region varies the current flowing from source to drain according to the applied voltage. In the case of the BFL6H10L-160 and the BFL6H10L-112, the gate voltage also affects the conducting channel\'s mobility and, in turn, its performance.The BFL6H10L-160, 112 transistors are robust in their application fields due to their ability to reliably handle high power levels, as well as their improved frequency response and linearity. This makes them ideal for high-frequency applications such as satellite communication, and even military communications systems. Not only are they a cost-effective choice, but their performance in the long run more than justifies the investment.In conclusion, the BFL6H10L-160, 112 transistors are highly reliable RF MOSFETs that are used in a variety of industrial applications due to their robust operation, high power level capabilities, high frequency response, and linearity. Their wide range of useful characteristics coupled with their durability and affordability makes them an optimal power solution for many industrial applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF6G27-10G,112 | Ampleon USA ... | 27.01 $ | 210 | RF FET LDMOS 65V 19DB SOT... |
BLF6G10LS-200RN,11 | Ampleon USA ... | 60.17 $ | 1000 | RF FET LDMOS 65V 20DB SOT... |
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BLF640U | Ampleon USA ... | 27.01 $ | 233 | RF FET LDMOS 65V 18.5DB S... |
BLF642,112 | Ampleon USA ... | 46.57 $ | 137 | RF FET LDMOS 65V 19DB SOT... |
BLF645,112 | Ampleon USA ... | 102.52 $ | 1442 | RF FET LDMOS 65V 16DB SOT... |
BLF6G13LS-250PGJ | Ampleon USA ... | 134.62 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G38-10G,118 | Ampleon USA ... | 23.7 $ | 100 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38-10G,112 | Ampleon USA ... | 23.7 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G22LS-40P,118 | Ampleon USA ... | 40.19 $ | 100 | RF FET LDMOS 65V 19DB SOT... |
BLF644PU | Ampleon USA ... | 103.4 $ | 57 | RF FET LDMOS 65V 23.5DB S... |
BLF647PS,112 | Ampleon USA ... | 149.83 $ | 19 | RF FET LDMOS 65V 17DB SOT... |
BLF6G38S-25,112 | Ampleon USA ... | 53.28 $ | 56 | RF FET LDMOS 65V 15DB SOT... |
BLF6G38LS-50,118 | Ampleon USA ... | 56.11 $ | 1000 | RF FET LDMOS 65V 14DB SOT... |
BLF6G38LS-50,112 | Ampleon USA ... | 65.39 $ | 85 | RF FET LDMOS 65V 14DB SOT... |
BLF6G21-10G,135 | Ampleon USA ... | 19.62 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF6G21-10G,112 | Ampleon USA ... | 26.4 $ | 604 | RF FET LDMOS 65V 18.5DB S... |
BLF647P,112 | Ampleon USA ... | 149.83 $ | 2 | RF FET LDMOS 65V 18DB SOT... |
BLF6G27LS-40P,112 | Ampleon USA ... | 56.33 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G13LS-250P,112 | Ampleon USA ... | 142.84 $ | 1000 | RF FET LDMOS 100V 17DB SO... |
BLF6G10L-40BRN,112 | Ampleon USA ... | 35.75 $ | 1000 | RF FET LDMOS 65V 23DB SOT... |
BLF6G22LS-40P,112 | Ampleon USA ... | 43.38 $ | 1000 | RF FET LDMOS 65V 19DB SOT... |
BLF6G38S-25,118 | Ampleon USA ... | 45.62 $ | 1000 | RF FET LDMOS 65V 15DB SOT... |
BLF6G27LS-40P,118 | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27LS-40PGJ | Ampleon USA ... | 48.23 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G27L-50BN,118 | Ampleon USA ... | 50.17 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6G27L-50BN,112 | Ampleon USA ... | 53.94 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF6H10LS-160,118 | Ampleon USA ... | 57.22 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6H10LS-160,112 | Ampleon USA ... | 62.93 $ | 1000 | RF FET LDMOS 104V 20DB SO... |
BLF6G10L-260PBM,11 | Ampleon USA ... | 78.3 $ | 1000 | RF FET LDMOS 65V SOT1110A... |
BLF6G15LS-250PBRN: | Ampleon USA ... | 88.95 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF6G15LS-250PBRN, | Ampleon USA ... | 93.7 $ | 1000 | RF FET 65V 18.5DB SOT1110... |
BLF647PSJ | Ampleon USA ... | 136.11 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF6G15L-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G15LS-500H,112 | Ampleon USA ... | 243.31 $ | 1000 | RF FET LDMOS 100V 16DB SO... |
BLF6G27-45,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
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