BLF6G13LS-250PGJ

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLF6G13LS-250PGJ transistor is a type of field effect transistor (FET), more specifically, a metal-oxide-semiconductor field-effect transistor (MOSFET). FETs are three-terminal, voltage-controlled semiconductor devices, which can be used in either switching or amplifier applications. Transistors can be classified according to the type of application they are best used for. MOSFETs in particular are mostly used in radio-frequency (RF) applications where high frequency signals must be processed with low power dissipation.

The BLF6G13LS-250PGJ transistor is one of Infineon’s power MOSFETs. It is a laterally diffused MOSFET (LDMOSFET) designed for broadband RF applications like mobile radio power amplifiers. It has a breakdown voltage of 250 volts and can handle up to 110 watts of power. The device has a low on-resistance, high power efficiency, and excellent linearity.

The working principle of the BLF6G13LS-250PGJ is relatively simple. The device has three terminals – the gate, source, and drain. The gate voltage controls the current flow between the source and drain, with a higher gate voltage causing a higher current flow. When the gate voltage is increased above a threshold voltage, the body depletion layer (which acts as an insulator) reduces, allowing current to flow. As the gate voltage is further increased, the current flow increases until it reaches a maximum, which is limited by the device parameters.

The BLF6G13LS-250PGJ is designed for use in wideband, low noise amplification and switching applications in mobile radio. Its ability to handle high power with low switching losses make it well-suited for applications such as power amplifiers, radio-frequency amplifiers, and detectors. Its low on-resistance and high efficiency also make it suitable for use in high frequency circuits. Additionally, the device’s excellent linearity makes it suitable for linear amplifier applications.

The BLF6G13LS-250PGJ is a highly versatile and reliable power MOSFET and an excellent choice for RF applications. It is capable of handling high power while maintaining low switching losses and excellent linearity, making it well-suited for a variety of mobile radio applications.

The specific data is subject to PDF, and the above content is for reference