BLF6G13LS-250P,112

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLF6G13LS-250P,112 is an RF (radio frequency) Power Field Effect Transistor (FET). It is designed primarily for use in power amplifiers for UHF FM communications equipment like high power broadcast transmitters, cellular radio base stations and radio communications systems in general. It is also suitable for high gain switching power amplifiers up to 900 MHz.

The name "FET" stands for Field Effect Transistor, which is a type of transistor that can be used to control the flow of electrons through a semiconductor. The BLF6G13LS-250P,112 is a particular design of FET that is specifically designed for use in radio frequency applications. It is also known as an "RF MOSFET".

A conventional transistor has three terminals, called the emitter, collector, and base. The emitter is the input terminal, the collector is the output terminal and the base is the control terminal. In a field effect transistor the operation is slightly different. It has two terminals, known as the gate and the source terminals. The gate is the control terminal and the source is the input terminal. The output terminal is not separated out as it is in a conventional transistor. The output terminal is a layer of oxide that separates the gate and the source terminals.

In operation, the input signal applied to the gate will cause a voltage drop across the oxide layer. If the voltage is high enough, current will flow through the oxide layer, which is called the channel. This channel is controlled by the applied gate voltage. The gate voltage is what controls the amount of current that flows through the channel. This current is what produces the output signal at the source terminal.

The BLF6G13LS-250P,112 is specifically designed for 200W power amplification applications. It has an RF power gain of 13dB at a frequency of 250MHz, a maximum operating voltage of 25V, and a maximum drain current of 36A. It also has a high-frequency cutoff of 1GHz.

It has a negative temperature coefficient of gain and a relatively low noise figure. It also features a very small package size, making it ideal for high-power applications where space is at a premium.

While the BLF6G13LS-250P,112 is most commonly used in power amplification applications, it can also be used in switching applications. In a switching application, the gate voltage is used to turn the transistor on or off. When the gate voltage is low, the transistor is on and current flows through the channel. When the gate voltage is high, the transistor is off and no current flows through the channel.

The BLF6G13LS-250P,112 is an excellent choice for high-power applications requiring a wide range of frequency operation. It is highly efficient, has a low noise figure, and is available in a compact package size. It is suitable for use in a variety of applications including UHF FM communications, power amplifiers, and switching

The specific data is subject to PDF, and the above content is for reference