BLF6G38-100,112

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	3.4GHz ~ 3.6GHz
Gain:	13dB
Voltage - Test:	28V
Current Rating:	34A
Noise Figure:	--
Current - Test:	1.05A
Power - Output:	18.5W
Voltage - Rated:	65V
Package / Case:	SOT-502A
Supplier Device Package:	LDMOST
Base Part Number:	BLF6G38

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BLF6G38-100-112 is a type of field-effect transistor (FET) produced by NXP Semiconductors, a leading global semiconductor supplier of high performance components. BLF6G38-100-112\'s most notable feature is its wideband operation. It operates in the range of DC to 24 GHz with low noise figures and an excellent input third-order intercept point of 16 dBm. This makes it suitable for a variety of applications, from wideband amplifiers and mixers to wideband, high-performance receivers.The BLF6G38-100-112 is a gallium arsenide (GaAs) n-type pseudomorphic high electron mobility transistor (pHEMT). It is a high power gallium-arsenide FET suitable for both wideband and narrowband operations. The device has a low noise figure, good gain, and excellent linearity. It can be used for wideband amplifiers, mixers, and highly linear receivers.The device is packaged in a 3-pad (1 x 1mm) ceramic QFN package, making it excellent for high-frequency applications. The gate length is 50 nm and the gate width is SO nm. The p-type drain and source are highly doped and an additional f-type drain is provided to improve off drain current performance.The working principle of the BLF6G38-100-112 is quite simple. The transistor consists of an electrons source and drain, and a gate to control the movement of electrons. When a voltage is applied to the gate, electrons are attracted from the source to the drain, allowing current to flow from the drain to the source. The gate voltage is used to control the amount of current flowing through the transistor.In summary, the BLF6G38-100-112 is a high power gallium arsenide FET designed for wideband operations. It has low noise figure, good gain, and excellent linearity. It is suitable for a variety of applications such as wideband amplifiers, mixers, and highly linear receivers. The device is packaged in a 3-pad (1x1mm) ceramic QFN package, making it excellent for high-frequency applications. The working principle of the BLF6G38-100-112 is quite simple, whereby the gate voltage is used to control the amount of current flowing through the transistor.

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